參數(shù)資料
型號： NAND512W3A2SN6E
元件分類： PROM
英文描述： 64M X 8 FLASH 3V PROM, PDSO48
封裝： 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
文件頁數(shù)： 1/51頁
文件大?。?/td> 1009K
代理商： NAND512W3A2SN6E
March 2011
210403 - Rev 3
1
Numonyx NAND SLC small page
70 nm Discrete
512 Mbit, 528 Byte/264 Word page, x8/x16, 1.8 V/3 V
Features
Density
– 512 Mbit: 4096 blocks
NAND Flash interface
– x8 or x16 bus width
– Multiplexed address/data
Memory configuration
– Page size:
x8 device: (512 + 16 spare) Bytes
x16 device: (256 + 8 spare) Words
– Block size:
x8 device: (16K + 512 spare) Bytes
x16 device: (8K + 256 spare) Words
Supply voltage: 1.8 V, 3 V
Read/write performance
– Random access: 12 s (3 V)/15 s(1.8 V)
(max)
– Sequential access: 30 ns (3 V)/50 ns
(1.8 V)(min)
– Page program time: 200 s (typ)
– Block erase time: 2 ms (typ)
– Programming performance (typ):
x8 device: 2.3 MByte/s
x16 device: 2.4 MByte/s
Additional features
– Copy back program mode
– Error correction code models
– Bad blocks management and wear leveling
algorithms
– Hardware simulation models
Quality and reliability
– 100,000 program/erase cycles (with ECC)
– 10 years data retention
– Operating temperature: –40 to 85 °C
Security
– OTP area
– Serial number (unique ID)
– Hardware program/erase locked during
power transitions
Electronic signature
– Manufacturer ID:
x8 device: 20h
x16 device: 0020h
–Device ID:
NAND512W3A2S: 76h
NAND512W4A2S: 0056h
NAND512R3A2S: 36h
NAND512R4A2S: 0046h
Package
– RoHS compliant
– TSOP48 12 x 20 mm
–VFBGA63 9 x 11 mm
Table 1.
Device summary
Root part number list - see Table 25 for details
NAND512W3A2S
NAND512W4A2S
NAND512R3A2S
NAND512R4A2S
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NAND512W3A2SN6F 制造商:Micron Technology Inc 功能描述:512MB NAND FLASH 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel
NAND512W3A2SZA6E 制造商:Micron Technology Inc 功能描述:SLC NAND Flash Parallel 3V/3.3V 512Mbit 64M x 8bit 12us 63-Pin VFBGA Tray 制造商:Micron Technology Inc 功能描述:NAND - Trays 制造商:Micron Technology Inc 功能描述:MICNAND512W3A2SZA6E 512MB NAND FLASH 制造商:Micron Technology 功能描述:SLC NAND Flash Parallel 3V/3.3V 512Mbit 64M x 8bit 12us 63-Pin VFBGA Tray
NAND512W3A2SZA6F 制造商:Micron Technology Inc 功能描述:SLC NAND Flash Parallel 3V/3.3V 512Mbit 64M x 8bit 12us 63-Pin VFBGA T/R 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel 制造商:Micron Technology 功能描述:SLC NAND Flash Parallel 3V/3.3V 512Mbit 64M x 8bit 12us 63-Pin VFBGA T/R
NAND512W4A0AN6E 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
NAND512W4A0AZA6E 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 3V/3.3V 512MBIT 32MX16 12US 63VFBGA - Trays
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