參數(shù)資料
型號(hào)： NAND512W3A2SN6E
元件分類： PROM
英文描述： 64M X 8 FLASH 3V PROM, PDSO48
封裝： 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
文件頁數(shù)： 14/51頁
文件大?。?/td> 1009K
代理商： NAND512W3A2SN6E
Numonyx SLC SP 70 nm
Device operations
210403 - Rev 3
6.2.2
Page read
After the random read access the page data is transferred to the page buffer in a time of
tWHBH (refer to Table 22 for value). Once the transfer is complete the Ready/Busy signal
goes High. The data can then be read out sequentially (from selected column address to
last column address) by pulsing the Read Enable signal.
Figure 8.
Read (A,B,C) operations
6.2.3
Sequential row read
After the data in last column of the page is output, if the Read Enable signal is pulsed and
Chip Enable remains Low, then the next page is automatically loaded into the page buffer
and the read operation continues. A sequential row read operation can only be used to read
within a block. If the block changes a new read command must be issued. Refer to Figure 9:
details about sequential row read operations. To terminate a sequential row read operation,
set to High the Chip Enable signal for more than tEHEL. Sequential row read is not available
when the Chip Enable don’t care option is enabled.
CL
E
W
AL
R
I/O
RB
00h/
01h/ 50h
ai07595c
Busy
Command
code
Address input
Data output (sequentially)
tBLBH1
(read)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NAND512W3A2SN6F 制造商:Micron Technology Inc 功能描述:512MB NAND FLASH 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel
NAND512W3A2SZA6E 制造商:Micron Technology Inc 功能描述:SLC NAND Flash Parallel 3V/3.3V 512Mbit 64M x 8bit 12us 63-Pin VFBGA Tray 制造商:Micron Technology Inc 功能描述:NAND - Trays 制造商:Micron Technology Inc 功能描述:MICNAND512W3A2SZA6E 512MB NAND FLASH 制造商:Micron Technology 功能描述:SLC NAND Flash Parallel 3V/3.3V 512Mbit 64M x 8bit 12us 63-Pin VFBGA Tray
NAND512W3A2SZA6F 制造商:Micron Technology Inc 功能描述:SLC NAND Flash Parallel 3V/3.3V 512Mbit 64M x 8bit 12us 63-Pin VFBGA T/R 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel 制造商:Micron Technology 功能描述:SLC NAND Flash Parallel 3V/3.3V 512Mbit 64M x 8bit 12us 63-Pin VFBGA T/R
NAND512W4A0AN6E 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
NAND512W4A0AZA6E 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 3V/3.3V 512MBIT 32MX16 12US 63VFBGA - Trays
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