參數(shù)資料
型號： NAND512W3A2SN6E
元件分類： PROM
英文描述： 64M X 8 FLASH 3V PROM, PDSO48
封裝： 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
文件頁數(shù)： 28/51頁
文件大小： 1009K
代理商： NAND512W3A2SN6E
DC and AC parameters
Numonyx SLC SP 70 nm
210403 - Rev 3
M
Figure 17.
Equivalent testing circuit for AC characteristics measurement
Ai11085
NAND flash
CL
2Rref
VDD
2Rref
GND
Table 19.
DC characteristics, 1.8 V devices(1)
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
IDD1
Operating current
Sequential
read
tRLRL minimum
E =VIL, IOUT =0mA
–8
15
mA
IDD2
Program
–
–8
15
mA
IDD3
Erase
–
–8
15
mA
IDD4
Standby current (TTL)
E=VDD-0.2, WP=0V/VDD
–
1
mA
IDD5
Standby current (CMOS)
E=VDD-0.2, WP=0/VDD
–
10
50
A
ILI
Input leakage current
VIN= 0 to VDDmax
–
±10
A
ILO
Output leakage current
VOUT= 0 to VDDmax
–
±10
A
VIH
Input high voltage
–
VDD-0.4
–
VDD+0.3
V
VIL
Input low voltage
–
0.3
–
0.4
V
VOH
Output high voltage level
IOH = 100 A
VDD-0.1
–
V
VOL
Output low voltage level
IOL = 100 A
–
0.1
V
IOL (RB)
Output low current (RB)
VOL = 0.1 V
3
4
mA
VLKO
VDD supply voltage (erase and
program lockout)
–
1.1
V
1.
Standby and leakage currents refer to a single die device. For a multiple die device, their value must be multiplied for the
number of dice of the stacked device, while the active power consumption depends on the number of dice concurrently
executing different operations.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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