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參數(shù)資料
| 型號： | NAND512W3A2SN6E |
| 元件分類： | PROM |
| 英文描述： | 64M X 8 FLASH 3V PROM, PDSO48 |
| 封裝： | 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 |
| 文件頁數(shù)： | 30/51頁 |
| 文件大?。?/td> | 1009K |
| 代理商： | NAND512W3A2SN6E |
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DC and AC parameters
Numonyx SLC SP 70 nm
210403 - Rev 3
Table 22.
AC characteristics for operations
Symbol
Alt.
symbol
Parameter
1.8 V
devices
3 V
devices
Unit
tALLRL1
tAR
Address Latch Low to
Read Enable Low
Read electronic signature
Min
10
ns
tALLRL2
Read cycle
Min
10
ns
tBHRL
tRR
Ready/Busy High to Read Enable Low
Min
20
ns
tBLBH1
Ready/Busy Low to
Ready/Busy High
Read busy time
Max
15
12
s
tBLBH2
tPROG
Program busy time
Max
500
s
tBLBH3
tBERS
Erase busy time
Max
3
ms
tBLBH4
tRST
Reset busy time, during ready
Max
5
s
Reset busy time, during read
Max
5
s
Reset busy time, during program
Max
10
s
Reset busy time, during erase
Max
500
s
tCLLRL
tCLR
Command Latch Low to Read Enable Low
Min
10
ns
tDZRL
tIR
Data Hi-Z to Read Enable Low
Min
0
ns
tEHQZ
tCHZ
Chip Enable High to Output Hi-Z
Max
30
ns
tELQV
tCEA
Chip Enable Low to Output Valid
Max
45
35
ns
tRHRL
tREH
Read Enable High to
Read Enable Low
Read Enable High hold time
Min
15
10
ns
tRHQZ
tRHZ
Read Enable High to Output Hi-Z
Max
30
ns
tEHQX
TOH
Chip Enable High or Read Enable High to Output Hold
Min
10
ns
tRHQX
tRLRH
tRP
Read Enable Low to
Read Enable High
Read Enable pulse width
Min
25
15
ns
tRLRL
tRC
Read Enable Low to
Read Enable Low
Read cycle time
Min
50
30
ns
tRLQV
tREA
Read Enable Low to
Output Valid
Read Enable access time
Max
30
18
ns
Read ES access time(1)
tWHBH
tR
Write Enable High to
Ready/Busy High
Read busy time
Max
15
12
s
tWHBL
tWB
Write Enable High to Ready/Busy Low
Max
100
ns
tWHRL
tWHR
Write Enable High to Read Enable Low
Min
60
ns
tVHWH
tVLWH
(2)
tWW
Write protection time
Min
100
ns
1.
ES = electronic signature.
2.
During a program/erase enable operation, tVHWH is the delay from WP High to W High. During a program/erase disable
operation, tVLWH is the delay from WP Low to W High.
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| NAND512W3A2SN6F | 制造商:Micron Technology Inc 功能描述:512MB NAND FLASH 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel |
| NAND512W3A2SZA6E | 制造商:Micron Technology Inc 功能描述:SLC NAND Flash Parallel 3V/3.3V 512Mbit 64M x 8bit 12us 63-Pin VFBGA Tray 制造商:Micron Technology Inc 功能描述:NAND - Trays 制造商:Micron Technology Inc 功能描述:MICNAND512W3A2SZA6E 512MB NAND FLASH 制造商:Micron Technology 功能描述:SLC NAND Flash Parallel 3V/3.3V 512Mbit 64M x 8bit 12us 63-Pin VFBGA Tray |
| NAND512W3A2SZA6F | 制造商:Micron Technology Inc 功能描述:SLC NAND Flash Parallel 3V/3.3V 512Mbit 64M x 8bit 12us 63-Pin VFBGA T/R 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel 制造商:Micron Technology 功能描述:SLC NAND Flash Parallel 3V/3.3V 512Mbit 64M x 8bit 12us 63-Pin VFBGA T/R |
| NAND512W4A0AN6E | 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| NAND512W4A0AZA6E | 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 3V/3.3V 512MBIT 32MX16 12US 63VFBGA - Trays |
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