參數(shù)資料
型號(hào): NAND512W3A2SN6E
元件分類: PROM
英文描述: 64M X 8 FLASH 3V PROM, PDSO48
封裝: 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
文件頁數(shù): 27/51頁
文件大?。?/td> 1009K
代理商: NAND512W3A2SN6E
Numonyx SLC SP 70 nm
DC and AC parameters
210403 - Rev 3
10
DC and AC parameters
This section summarizes the operating and measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC characteristics tables that
follow, are derived from tests performed under the measurement conditions summarized in
operating conditions in their circuit match the measurement conditions when relying on the
quoted parameters.
Table 17.
Operating and AC measurement conditions
Parameter
NAND Flash
Units
Min
Max
Supply voltage (VDD)
1.8 V devices
1.7
1.95
V
3 V devices
2.7
3.6
Ambient temperature (TA)
Grade 6
–40
85
°C
Load capacitance (CL) (1 TTL GATE
and CL)
1.8 V devices
30
pF
3 V devices
50
Input pulses voltages
1.8 V devices
0
VDD
V
3 V devices
0.4
2.4
Input and output timing ref. voltages
1.8 V devices
0.9
V
3 V devices
1.5
Input rise and fall times
5
ns
Output circuit resistors, Rref
8.35
k
Ω
Table 18.
Capacitance(1)(2)
1.
TA = 25 °C, f = 1 MHz. CIN and CI/O are not 100% tested.
2.
Input/output capacitances double on stacked devices.
Symbol
Parameter
Test conditions
Typ
Max
Unit
CIN
Input capacitance
VIN = 0 V
10
pF
CI/O
Input/output
capacitance
VIL = 0 V
10
pF
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