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參數(shù)資料
| 型號： | NAND99R3M2AZBB5E |
| 廠商： | NUMONYX |
| 元件分類： | 存儲器 |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, PBGA107 |
| 封裝： | 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-107 |
| 文件頁數(shù)： | 1/33頁 |
| 文件大?。?/td> | 724K |
| 代理商： | NAND99R3M2AZBB5E |
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October 2008
Rev 13
1
NANDxxxxMx
256/512-Mbit or 1-Gbit (x8/x16, 1.8/2.6 V, 528-byte page) NAND
flash and 256/512-Mbit (x16/x32, 1.8 V) LPSDRAM, MCP or PoP
Features
n
Packages
– MCP (multichip package)
– PoP (package on package)
n
Device composition
– 1 die of 256 or 512 Mbits or 1 Gbit (x8/x16)
SLC small page NAND flash memory
– 1 die of 256 or 512 Mbits (x16 or x32)
SDR/DDR LPSDRAM
n
Supply voltages
–VDDF = 1.7 V to 1.95 V or 2.5 V to 3.6 V
–VDDD = VDDQD = 1.7 V to 1.95 V
n
Electronic signature
n
ECOPACK packages
n
Temperature range: –30 to 85 °C
Flash memory
n
NAND interface
– x8/x16 bus width
– Multiplexed address/data
n
Page size
– x8 device: (512 + 16 spare) bytes
– x16 device: (256 + 8 spare) words
n
Block size
– x8 device: (16K + 512 spare) bytes
– x16 device: (8K + 256 spare) words
n
Page read/program
– Random access: 12 s (3 V), 15 s (1.8 V)
– Sequential access: 30 ns (3 V), 50 ns
(1.8 V)
– Page program time: 200 s (typ)
n
Copy back program mode
– Fast page copy without external buffering
n
Fast block erase
– Block erase time: 2 ms (typ)
– Status register
n
Data integrity
– 100 000 program/erase cycles
– 10 years data retention
Single or double data rate LPSDRAM
n
Interface: ×16 or ×32 bus width
n
Deep power-down mode
n
1.8 V LVCMOS interface
n
Quad internal banks controlled by BA0, BA1
n
Automatic and controlled precharge
n
Auto refresh and self refresh
– 8 192 refresh cycles/64 ms
– Programmable partial array self refresh
– Auto temperature compensated self refresh
n
Wrap sequence: sequential/interleave
n
Burst termination by Burst Stop command and
Precharge command
Table 1.
Device summary
NA
NDxxx
xMx
NAND88R3M0
NAND99W3M0 NAND98R4M2
NAND98R3M0
NAND99W3M1 NAND99R3M1
NAND98W3M0 NANDA9W3M1
NAND99R3M0
NAND99R4M2
NAND99R3M2
NAND98W3M1
NAND98R3M1
NAND98R3M2
FBGA
TFBGA107 10.5 × 13 × 1.2 mm (ZBB)
TFBGA149 10 × 13.5 × 1.2 mm (ZBA)
TFBGA137 10.5 × 13 × 1.2 mm (ZBC)
LFBGA137 10.5 × 13 × 1.4 mm (ZBC)
TFBGA152 14 x 14 x 1.1 mm (ZPA)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NAND99R3M2AZBB5F | 制造商:Micron Technology Inc 功能描述:WIRELESS - Tape and Reel |
| NAND99R3M4BZBB5E | 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays |
| NAND99R3M4BZBB5F | 制造商:Micron Technology Inc 功能描述:WIRELESS - Tape and Reel |
| NAND99R4M2AZBA5E | 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays |
| NAND99R4M4BZBA5E | 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays |
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