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參數(shù)資料
| 型號： | NAND512W3A2SN6E |
| 元件分類： | PROM |
| 英文描述： | 64M X 8 FLASH 3V PROM, PDSO48 |
| 封裝： | 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 |
| 文件頁數(shù)： | 26/51頁 |
| 文件大小： | 1009K |
| 代理商： | NAND512W3A2SN6E |
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Program and erase times and endurance cycles
Numonyx SLC SP 70 nm
210403 - Rev 3
8
Program and erase times and endurance cycles
The program and erase times and the number of program/erase cycles per block are shown
in Table 15.
9
Maximum ratings
Stressing the device above the ratings listed in Table 16: Absolute maximum ratings, may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Table 15.
Program, erase times and program erase endurance cycles
Parameters
NAND Flash
Unit
Min
Typ
Max
Page program time
200
500
s
Block erase time
2
3ms
Program/erase cycles per block (with ECC)
100,000
cycles
Data retention
10
years
Table 16.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
Min
Max
TBIAS
Temperature under bias
– 50
125
°C
TSTG
Storage temperature
– 65
150
°C
TLEAD
Lead temperature during soldering
260
°C
VIO
(1)
Input or output voltage
1.8 V devices
– 0.6
2.7
V
3 V devices
– 0.6
4.6
V
VDD
Supply voltage
1.8 V devices
– 0.6
2.7
V
3 V devices
– 0.6
4.6
V
1.
Minimum voltage may undershoot to –2 V for less than 20 ns during transitions on input and I/O pins. Maximum voltage
may overshoot to VDD + 2 V for less than 20 ns during transitions on I/O pins.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NAND512W3A2SN6F | 制造商:Micron Technology Inc 功能描述:512MB NAND FLASH 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel |
| NAND512W3A2SZA6E | 制造商:Micron Technology Inc 功能描述:SLC NAND Flash Parallel 3V/3.3V 512Mbit 64M x 8bit 12us 63-Pin VFBGA Tray 制造商:Micron Technology Inc 功能描述:NAND - Trays 制造商:Micron Technology Inc 功能描述:MICNAND512W3A2SZA6E 512MB NAND FLASH 制造商:Micron Technology 功能描述:SLC NAND Flash Parallel 3V/3.3V 512Mbit 64M x 8bit 12us 63-Pin VFBGA Tray |
| NAND512W3A2SZA6F | 制造商:Micron Technology Inc 功能描述:SLC NAND Flash Parallel 3V/3.3V 512Mbit 64M x 8bit 12us 63-Pin VFBGA T/R 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel 制造商:Micron Technology 功能描述:SLC NAND Flash Parallel 3V/3.3V 512Mbit 64M x 8bit 12us 63-Pin VFBGA T/R |
| NAND512W4A0AN6E | 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| NAND512W4A0AZA6E | 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 3V/3.3V 512MBIT 32MX16 12US 63VFBGA - Trays |
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