- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄189004 > NANDB9R4N2CZBA5E (NUMONYX) SPECIALTY MEMORY CIRCUIT, PBGA149 PDF資料下載
參數(shù)資料
| 型號： | NANDB9R4N2CZBA5E |
| 廠商： | NUMONYX |
| 元件分類： | 存儲器 |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, PBGA149 |
| 封裝： | 10 X 13.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-149 |
| 文件頁數(shù)： | 1/52頁 |
| 文件大?。?/td> | 1126K |
| 代理商： | NANDB9R4N2CZBA5E |
當前第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁
October 2008
Rev 12
1
NANDxxxxNx
Large page NAND flash memory and
low power SDRAM, 1.8/2.6 V MCP and PoP
Features
n
MCP (multichip package) and PoP (package
on package)
– NAND flash memory
– 1-, 2-, 4-, 2x2-Gbit large page size NAND
flash memory
– 256-, 512-, 2x512-, 128+256/512-Mbit or
1-Gbit (x16/x32) SDR/DDR LPSDRAM
n
Temperature range: -30 up to 85 °C
n
Supply voltage
– NAND flash: VDDF= 1.7-1.95 V or 2.5-3.6 V
– LPSDRAM: VDDD = VDDQD = 1.7-1.95 V
n
Electronic signature
n
ECOPACK packages
Flash memory
n
Nand interface
– x8 or x16 bus width
– Multiplexed address/data
n
Page size
– x8 device: (2048 + 64 spare) bytes
– x16 device: (1024 + 32 spare) words
n
Block size
– x8 device: (128K + 4K spare) bytes
– x16 device: (64K + 2K spare) words
n
Page read/program
– Random access: 25 s (max)
– Sequential access: 25/30 ns (min)
– Page program time: 200 s (typ)
n
Copy back program mode
n
Fast block erase: 1.5/2 ms (typ)
n
Chip Enable ‘don’t care’
n
Status register
n
Data integrity
– 100 000 program/erase cycles
– 10 years data retention
Single or double data rate LPSDRAM
n
Interface: x16/32 bus width
n
Deep power-down mode
n
1.8 V LVCMOS interface
n
Quad internal banks controlled by BA0, BA1
n
Wrap sequence: sequential/interleaved
n
Automatic and controlled precharge
n
Auto refresh and self refresh
– 8192 or 4096 (for 128 Mbits) refresh
cycles/64 ms
– Programmable partial array self refresh
– Auto temperature compensated self refresh
Table 1.
Device summary
NANDxxxxNx
NANDA0R3N0
NANDA8R3N0
NANDA9R3Nx
NANDA9R4Nx
NANDA9WxN1
NANDB0R3N0
NANDBAR3Nx
NANDBAR4Nx
NANDB1R3N0
NANDB9R3N0
NANDB9R4Nx
NANDC9R4N0
NANDBAW4N1
NANDCAW4N1
NANDCBR4N3
NANDC3R4N5
NANDD3R4N5
NANDDBR3N5
FBGA
TFBGA107 10.5 × 13 × 1.2 mm
TFBGA137 10.5 x 13 x 1.2 mm
LFBGA137 10.5 x 13 x 1.4 mm
TFBGA149 10 × 13.5 × 1.2 mm
VFBGA160 15 x 15 x 1 mm
VFBGA152 14 x 14 x 0.9 mm
TFBGA152 14×14 × 1.1 mm
TFBGA152 14 × 14 × 1.2 mm
TFBGA128 12 x 12 x 1.1 mm
FBGA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NB06QSA035 | 6 A, 35 V, SILICON, RECTIFIER DIODE |
| NB100LVEP224FAR2G | 100LVE SERIES, LOW SKEW CLOCK DRIVER, 24 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), PQFP64 |
| NB14R1521 | 1 ELEMENT, 1521 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR |
| F14K69.5 | 1 ELEMENT, 69.5 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR |
| F14M520 | 1 ELEMENT, 520 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NANDBAR3N6AZPC5E | 制造商:Micron Technology Inc 功能描述:256MX8/64MX16 MCP PLASTIC PBF TFBGA 1.8V COMBO - Trays |
| NANDBAR3N8AZBB5E | 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays |
| NANDBAR4N0AZBA5E | 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays |
| NANDBAR4N0AZBA5F | 制造商:Micron Technology Inc 功能描述:WIRELESS - Tape and Reel |
| NANDBAR4N2AZBA5E | 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays |
發(fā)布緊急采購，3分鐘左右您將得到回復。