參數(shù)資料
型號: GE28F640W30TD70
廠商: INTEL CORP
元件分類: PROM
英文描述: 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA56
封裝: 0.75 MM PITCH, VFBGA-56
文件頁數(shù): 84/104頁
文件大?。?/td> 1443K
代理商: GE28F640W30TD70
28F640W30, 28F320W30, 28F128W30
June 2005
Intel Wireless Flash Memory (W30)
Datasheet
80
Order Number: 290702, Revision: 011
13.3
VPP Protection
The Intel
Wireless Flash Memory (W30) provides in-system program and erase at V
PPL. For
factory programming, the W30 flash memory device also includes a low-cost, backward-
compatible 12 V programming feature.(See “Factory Programming” on page 63.) The EFP feature
can also be used to greatly improve factory program performance, as explained in Section 11.3,
In addition to flexible block locking, holding the VPP programming voltage low can provide
hardware write protection of all flash-device blocks. If VPP is below VPPLK, program or erase
operations result in an error displayed in SR[3]. (See Figure 37.)
Note:
If the VCC supply can sink adequate current, you can use an appropriately valued resistor.
Figure 36.
Protection Register Locking
0x84
0x88
0x85
0x81
0x80
PR Lock Register 0
User-Programmable
Intel Factory-Programmed
15 14 13 12 11 10
9
8
7
6
5
4
3
2
1
0
Figure 37.
Examples of VPP Power Supply Configurations
12 V fast programming
Absolute write protection with V
PP
V
PPLK
System supply
(Note 1)
VCC
VPP
12 V supply
Low voltage and 12 V fast programming
System supply
12 V supply
Low-voltage programming
Absolute write protection via logic signal
System supply
Prot# (logic signal)
Low-voltage programming
System supply
≤ 10K
VCC
VPP
VCC
VPP
VCC
VPP
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