參數(shù)資料
型號： GE28F640W30TD70
廠商： INTEL CORP
元件分類： PROM
英文描述： 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA56
封裝： 0.75 MM PITCH, VFBGA-56
文件頁數(shù)： 4/104頁
文件大?。?/td> 1443K
代理商： GE28F640W30TD70
28F640W30, 28F320W30, 28F128W30
Datasheet
Intel Wireless Flash Memory (W30)
June 2005
Order Number: 290702, Revision: 011
101
Table 44.
Partition Region 2 Information
Offset
(1)
See table below
P = 39h
Description
Address
Bottom
Top
(Optional flash features and commands)
Len
Bot
Top
(P+30)h
(P+28)h Number of identical partitions within the partition region
2
69:
61:
(P+31)h
(P+29)h
6A:
62:
(P+32)h
(P+2A)h
1
6B:
63:
(P+33)h
(P+2B)h
1
6C:
64:
(P+34)h
(P+2C)h
1
6D:
65:
(P+35)h
(P+2D)h
1
6E:
66:
(P+36)h
(P+2E)h Partition Region 2 Erase Block Type 1 Information
4
6F:
67:
(P+37)h
(P+2F)h
bits 0–15 = y, y+1 = number of identical-size erase blocks
70:
68:
(P+38)h
(P+30)h
bits 16–31 = z, region erase block(s) size are z x 256 bytes
71:
69:
(P+39)h
(P+31)h
72:
6A:
(P+3A)h
(P+32)h Partition 2 (Erase block Type 1)
2
73:
6B:
(P+3B)h
(P+33)h
Minimum block erase cycles x 1000
74:
6C:
(P+3C)h
(P+34)h
1
75:
6D:
(P+3D)h
(P+35)h
1
76:
6E:
(P+36)h Partition Region 2 Erase Block Type 2 Information
4
6F:
(P+37)h
bits 0–15 = y, y+1 = number of identical-size erase blocks
70:
(P+38)h
bits 16–31 = z, region erase block(s) size are z x 256 bytes
71:
(P+39)h
72:
(P+3A)h Partition 2 (Erase Block Type 2)
273:
(P+3B)h
Minimum block erase cycles x 1000
74:
(P+3C)h
1
75:
(P+3D)h
1
76:
(P+3E)h
(P+3E)h Features Space definitions (Reserved for future use)
TBD
77:
(P+3F)h
(P+3F)h Reserved for future use
Resv'd
78:
Partition 2 (Erase Block Type 2) bits per cell
bits 0–3 = bits per cell in erase region
bit 4 = reserved for “internal ECC used” (1=yes, 0=no)
bits 5–7 = reserved for future use
Partition 2 (Erase block Type 2) pagemode and synchronous
mode capabilities as defined in Table 10.
bit 0 = page-mode host reads permitted (1=yes, 0=no)
bit 1 = synchronous host reads permitted (1=yes, 0=no)
bit 2 = synchronous host writes permitted (1=yes, 0=no)
bits 3–7 = reserved for future use
Simultaneous program or erase operations allowed in other
partitions while a partition in this region is in Erase mode
bits 0–3 = number of simultaneous Program operations
bits 4–7 = number of simultaneous Erase operations
Types of erase block regions in this Partition Region.
x = 0 = no erase blocking; the Partition Region erases in bulk
x = number of erase block regions w/ contiguous same-size
erase blocks. Symmetrically blocked partitions have one
blocking region. Partition size = (Type 1 blocks)x(Type 1
block sizes) + (Type 2 blocks)x(Type 2 block sizes) +…+
(Type n blocks)x(Type n block sizes)
Partition 2 (Erase block Type 1) bits per cell
bits 0–3 = bits per cell in erase region
bit 4 = reserved for “internal ECC used” (1=yes, 0=no)
bits 5–7 = reserve for future use
Partition 2 (erase block Type 1) pagemode and synchronous
mode capabilities as defined in Table 10.
bit 0 = page-mode host reads permitted (1=yes, 0=no)
bit 1 = synchronous host reads permitted (1=yes, 0=no)
bit 2 = synchronous host writes permitted (1=yes, 0=no)
bits 3–7 = reserved for future use
Simultaneous program or erase operations allowed in other
partitions while a partition in this region is in Program mode
bits 0–3 = number of simultaneous Program operations
bits 4–7 = number of simultaneous Erase operations
Number of program or erase operations allowed in a partition
bits 0–3 = number of simultaneous Program operations
bits 4–7 = number of simultaneous Erase operations
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