- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄299156 > GE28F640W30TD70 (INTEL CORP) 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA56 PDF資料下載
參數(shù)資料
| 型號： | GE28F640W30TD70 |
| 廠商： | INTEL CORP |
| 元件分類： | PROM |
| 英文描述： | 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA56 |
| 封裝： | 0.75 MM PITCH, VFBGA-56 |
| 文件頁數(shù)： | 51/104頁 |
| 文件大?。?/td> | 1443K |
| 代理商： | GE28F640W30TD70 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁當(dāng)前第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁第88頁第89頁第90頁第91頁第92頁第93頁第94頁第95頁第96頁第97頁第98頁第99頁第100頁第101頁第102頁第103頁第104頁
28F640W30, 28F320W30, 28F128W30
June 2005
Intel Wireless Flash Memory (W30)
Datasheet
50
Order Number: 290702, Revision: 011
9.0
Flash Device Operations
This chapter provides an overview of flash device operations. The W30 flash memory device
family includes an on-chip Write State Machine (WSM) to manage block erase and program
algorithms. The WSM Command User Interface (CUI) allows minimal processor overhead with
RAM-like interface timings.
9.1
Bus Operations
9.1.1
Read
The W30 flash memory device has several read configurations:
Asynchronous page mode read.
Synchronous burst mode read — outputs four, eight, sixteen, or continuous words, from main
blocks and parameter blocks.
Several read modes are available in each partition:
Read-array mode: read accesses return flash memory array data from the addressed
locations.
Read identifier mode: reads return manufacturer and device identifier data, block lock status,
and protection register data. Identifier information can be accessed starting at a 4-Mbit
partition base addresses; the flash memory array is not accessible in read identifier mode.
Read query mode: reads return the flash device CFI data. CFI information can be accessed
starting at a 4-Mbit partition base addresses; the flash memory array is not accessible in read
query mode.
Read status register mode: reads return status register data from the addressed partition. The
array data for that partition is not accessible. A system processor can check the status register
to determine the state of an addressed partition, or to monitor program and erase progress.
Table 17.
Bus Operations Summary
Bus Operation
RST#
CLK
ADV#
CE#
OE#
WE#
WAIT
DQ[15:0]
Notes
Read
Asynchronous
VIH
X
L
H
Asserted
Output
-
Synchronous
VIH
Running
L
H
Driven
Output
1
Burst Suspend
VIH
Halted
X
L
H
Active
Output
-
Write
VIH
X
L
H
L
Asserted
Input
2
Output Disable
VIH
XX
L
H
Asserted
High-Z
3
Standby
VIH
XX
H
X
High-Z
3
Reset
VIL
XX
X
High-Z
3,4
Notes:
1.
WAIT is valid only during synchronous array-read operations.
2.
Refer to the Table 19, “Bus Cycle Definitions” on page 55 for valid DQ[15:0] during a write operation.
3.
X = Don’t Care (H or L).
4.
RST# must be at VSS ± 0.2 V to meet the maximum specified power-down current.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GEN12.5-120 | Programmable DC Power Supplies 750W/1500W |
| GEN12.5-60 | Programmable DC Power Supplies 750W/1500W |
| GFL750 | COPPER ALLOY, WIRE TERMINAL |
| GFL500 | COPPER ALLOY, WIRE TERMINAL |
| GFL350 | COPPER ALLOY, WIRE TERMINAL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GE28F800B3BA90 | 制造商:Intel 功能描述:NOR Flash, 512K x 16, 45 Pin, Plastic, BGA |
| GE28F800B3TA90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory |
| GE28F800C3BA70 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3) |
| GE28F800C3BA90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3) |
| GE28F800C3BC70 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3) |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。