參數(shù)資料
型號(hào)： GE28F640W30TD70
廠商： INTEL CORP
元件分類： PROM
英文描述： 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA56
封裝： 0.75 MM PITCH, VFBGA-56
文件頁(yè)數(shù)： 104/104頁(yè)
文件大小： 1443K
代理商： GE28F640W30TD70
28F640W30, 28F320W30, 28F128W30
Datasheet
Intel Wireless Flash Memory (W30)
June 2005
Order Number: 290702, Revision: 011
99
Table 41.
Burst Read Information for Non-Multiplexed Flash Device
Table 42.
Partition and Erase-Block Region Information
Table 40.
Protection Register Information
Offset(1)
P = 39h
Length
Description (Optional flash device features and commands)
Add.
Hex
Code
Value
(P+E)h
1
Number of Protection register fields in JEDEC ID space.
00h indicates that 256 protection fields are available
47:
--01
1
(P+F)h
(P+10)h
(P+11)h
(P+12)h
4
Protection Field 1: Protection Description
This field describes user-available One Time Programmable (OTP)
Protection register bytes.
Some bytes are pre-programmed with flash device-unique
serial numbers.
Other bytes are user programmable.
Bits 0-15 point to the Protection register Lock byte, the first byte in
the section. The following bytes are factory pre-programmed and
user-programmable.
bits 0--7 = Lock/bytes Jedec-plane physical low address
bits 8--15 = Lock/bytes Jedec-plane physical high address
bits 16--23 = n such that 2n = factory pre-programmed bytes
bits 24--31 =n such that 2n = user programmable bytes
48:
49:
4A:
4B:
--80
--00
--03
80h
00h
8 byte
Offset
(1)
Length
Description
Hex
P = 39h
(Optional flash features and commands)
Add.
Code Value
(P+13)h
1
4C:
--03
8 byte
(P+14)h
1
4D:
--04
4
(P+15)h
1
4E:
--01
4
(P+16)h
1
Synchronous mode read capability configuration 2
4F:
--02
8
(P+17)h
1
Synchronous mode read capability configuration 3
50:
--03
16
(P+18)h
1
Synchronous mode read capability configuration 4
51:
--07
Cont
Page Mode Read capability
bits 0–7 = “n” such that 2
n HEX value represents the number of
read-page bytes. See offset 28h for device word width to
determine page-mode data output width. 00h indicates no
read page buffer.
Number of synchronous mode read configuration fields that
follow. 00h indicates no burst capability.
Synchronous mode read capability configuration 1
Bits 3–7 = Reserved
bits 0–2 “n” such that 2
n+1 HEX value represents the
maximum number of continuous synchronous reads when
the device is configured for its maximum word width. A value
of 07h indicates that the device is capable of continuous
linear bursts that will output data until the internal burst
counter reaches the end of the device’s burstable address
space. This field’s 3-bit value can be written directly to the
Read Configuration Register bits 0–2 if the device is
configured for its maximum word width. See offset 28h for
word width to determine the burst data output width.
Offset
(1)
See table below
P = 39h
Description
Address
Bottom
Top
(Optional flash features and commands)
Len
Bot
Top
(P+19)h
1
52:
Number of device hardware-partition regions within the device.
x = 0: a single hardware partition device (no fields follow).
x specifies the number of device partition regions containing
one or more contiguous erase block regions.
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