參數(shù)資料
型號(hào): GE28F640W30TD70
廠商: INTEL CORP
元件分類: PROM
英文描述: 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA56
封裝: 0.75 MM PITCH, VFBGA-56
文件頁數(shù): 101/104頁
文件大?。?/td> 1443K
代理商: GE28F640W30TD70
28F640W30, 28F320W30, 28F128W30
June 2005
Intel Wireless Flash Memory (W30)
Datasheet
96
Order Number: 290702, Revision: 011
Table 37.
System Interface Information
Offset
Length
Description
Add.
Hex
Code Value
1Bh
1
1B:
--17
1.7V
1Ch
1
1C:
--19
1.9V
1Dh
1
1D:
--B4
11.4V
1Eh
1
1E:
--C6
12.6V
1Fh
1
“n” such that typical single word program time-out = 2
n -sec
1F:
--04
16s
20h
1
“n” such that typical max. buffer write time-out = 2
n -sec
20:
--00
NA
21h
1
“n” such that typical block erase time-out = 2
n m-sec
21:
--0A
1s
22h
1
“n” such that typical full chip erase time-out = 2
n m-sec
22:
--00
NA
23h
1
“n” such that maximum word program time-out = 2
n times typical 23:
--04
256s
24h
1
“n” such that maximum buffer write time-out = 2
n times typical
24:
--00
NA
25h
1
“n” such that maximum block erase time-out = 2
n times typical
25:
--03
8s
26h
1
“n” such that maximum chip erase time-out = 2
n times typical
26:
--00
NA
VCC logic supply minimum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 BCD volts
VCC logic supply maximum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 BCD volts
VPP [programming] supply minimum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
VPP [programming] supply maximum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
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