參數(shù)資料
型號(hào)： GE28F640W30TD70
廠商： INTEL CORP
元件分類(lèi)： PROM
英文描述： 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA56
封裝： 0.75 MM PITCH, VFBGA-56
文件頁(yè)數(shù)： 69/104頁(yè)
文件大小： 1443K
代理商： GE28F640W30TD70
28F640W30, 28F320W30, 28F128W30
Datasheet
Intel Wireless Flash Memory (W30)
June 2005
Order Number: 290702, Revision: 011
67
12.0
Program and Erase Operations
12.1
Program/Erase Suspend and Resume
The Program Suspend and Erase Suspend commands halt an in-progress program or erase
operation. The command can be issued at any flash device address. The partition corresponding to
the address of the command remains in its previous state. A suspend command allows data to be
accessed from memory locations other than the location being programmed or the block being
erased.
A program operation can be suspended only to perform a read operation.
An erase operation can be suspended to perform either a program or a read operation within
any block, except the block that is erase suspended.
A program command nested within a suspended erase can subsequently be suspended to read
yet another location.
Once a program or erase process starts, the Suspend command requests that the WSM suspends the
program or erase sequence at predetermined points in the algorithm. The partition that is actually
suspended continues to output status register data after the Suspend command is written. An
operation is suspended when status bits SR[7] and SR[6] and/or SR[2] are set.
To read data from blocks within the partition (other than an erase-suspended block), write a Read
Array command. Block erase cannot resume until the program operations initiated during erase
suspend are complete.
Read Array, Read Status Register, Read Identifier (ID), Read Query, and Program Resume are
valid commands during Program or Erase Suspend.
Additionally, Clear Status Register, Program, Program Suspend, Erase Resume, Lock Block,
Unlock Block, and Lock-Down Block are valid commands during erase suspend.
To read data from a block in a partition that is not programming or erasing, the operation does not
need to be suspended.
If the other partition is already in read array, ID, or Query mode, issuing a valid address returns
corresponding data.
If the other partition is not in a read mode, one of the read commands must be issued to the
partition before data can be read.
During a suspend, CE# = VIH places the flash device in standby state, which reduces active current.
VPP must remain at its program level and WP# must remain unchanged while in suspend mode.
A resume command instructs the WSM to continue programming or erasing, and clears status
register bits SR[2] (or SR[6]) and SR[7]. The Resume command can be written to any partition.
When read at the partition that is programming or erasing, the flash device outputs data
corresponding to the last mode for that partition. If the status register error bits are set, the status
register can be cleared before issuing the next instruction. RST# must remain at VIH. See Figure
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