- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄299156 > GE28F640W30TD70 (INTEL CORP) 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA56 PDF資料下載
參數(shù)資料
| 型號： | GE28F640W30TD70 |
| 廠商： | INTEL CORP |
| 元件分類： | PROM |
| 英文描述： | 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA56 |
| 封裝： | 0.75 MM PITCH, VFBGA-56 |
| 文件頁數(shù)： | 80/104頁 |
| 文件大小： | 1443K |
| 代理商： | GE28F640W30TD70 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁當前第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁第88頁第89頁第90頁第91頁第92頁第93頁第94頁第95頁第96頁第97頁第98頁第99頁第100頁第101頁第102頁第103頁第104頁
28F640W30, 28F320W30, 28F128W30
Datasheet
Intel Wireless Flash Memory (W30)
June 2005
Order Number: 290702, Revision: 011
77
13.2
Protection Register
The W30 flash memory device includes a 128-bit Protection Register. This protection register is
used to increase system security and for identification purposes. The protection register value can
match the flash device to the system CPU or ASIC to prevent flash device substitution.
The lower 64 bits within the protection register are programmed by Intel with a unique number
in each flash device.
The upper 64 OTP bits within the protection register are left for the customer to program.
Once programmed, the customer segment can be locked to prevent further programming.
Note:
The individual bits of the user segment of the protection register are OTP, not the register in total.
The user can program each OTP bit individually, one at a time, if desired. However, after the
protection register is locked, the entire user segment is locked and no more user bits can be
programmed.
The protection register shares some of the same internal flash device resources as the parameter
partition. Therefore, RWW is allowed only between the protection register and the main partitions.
Table 26 describes the operations allowed in the protection register, parameter partition, and main
partition during RWW and RWE.
Figure 34.
Locking Operations Flowchart
No
O
p
ti
onal
Start
Write 60h
Block Address
Write 90h
BBA + 02h
Read Block Lock
Status
Locking
Change?
Lock Change
Complete
Write 01,D0,2Fh
Block Address
Write FFh
Partition Address
Yes
Write
Read
(Optional)
Standby
(Optional)
Write
Lock
Setup
Lock,
Unlock, or
Lockdown
Confirm
Read ID
Plane
Block Lock
Status
Read
Array
Data = 60h
Addr = Block to lock/unlock/lock-down (BA)
Data = 01h (Lock block)
D0h (Unlock block)
2Fh (Lockdown block)
Addr = Block to lock/unlock/lock-down (BA)
Data = 90h
Addr = BBA + 02h
Block Lock status data
Addr = BBA + 02h
Confirm locking change on DQ[1:0].
(See Block Locking State Transitions Table
for valid combinations.)
Data = FFh
Addr = Any address in same partition
Bus
Operation
Command
Comments
LOCKING OPERATIONS PROCEDURE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GEN12.5-120 | Programmable DC Power Supplies 750W/1500W |
| GEN12.5-60 | Programmable DC Power Supplies 750W/1500W |
| GFL750 | COPPER ALLOY, WIRE TERMINAL |
| GFL500 | COPPER ALLOY, WIRE TERMINAL |
| GFL350 | COPPER ALLOY, WIRE TERMINAL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GE28F800B3BA90 | 制造商:Intel 功能描述:NOR Flash, 512K x 16, 45 Pin, Plastic, BGA |
| GE28F800B3TA90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory |
| GE28F800C3BA70 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3) |
| GE28F800C3BA90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3) |
| GE28F800C3BC70 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3) |
發(fā)布緊急采購，3分鐘左右您將得到回復。