參數(shù)資料
型號： EDX5116ADSE
廠商： Elpida Memory, Inc.
英文描述： 512M bits XDR⑩ DRAM
中文描述： 512M比特的XDR DRAM的⑩
文件頁數(shù)： 51/78頁
文件大?。?/td> 3311K
代理商： EDX5116ADSE
Data Sheet E1033E30 (Ver. 3.0)
51
EDX5116ADSE
The block diagram in Figure 39 indicates that the Dynamic
Width logic is positioned after the serial-to-parallel conversion
(demux block) in the data receiver block and before the paral-
lel-to-serial conversion (mux block) in the data transmitter
block (see also the block diagram in Figure 2). The block dia-
gram is shown in this manner so the functionality of the logic
can be made as clear as possible. Some implementations may
place this logic in the data receiver and transmitter blocks, per-
forming the mapping in Figure 40 on the serial data rather than
the parallel data. However, this design choice will not affect the
functionality of the Dynamic Width logic; it is strictly an imple-
mentation decision.
Figure 40
D-to-S and S -to-Q Mapping for Dynamic Width Control
WIDTH[2:0]=000 (x1 device width)
000
S[0][15:0]
001
S[1][15:0]
010
S[2][15:0]
011
S[3][15:0]
100
S[4][15:0]
101
S[5][15:0]
110
S[6][15:0]
111
S[7][15:0]
S1000
S[8][15:0]
Q[0][15:0]
S[9][15:0]
WIDTH[2:0]=001 (x2 device width)
000x
S[4,0][15:0]
001x
S[5,1][15:0]
010x
S[6,2][15:0]
011x
S[7,3][15:0]
100x
Q[1:0][15:0]
S[11:10][15:0]
WIDTH[2:0]=010 (x4 device width)
0xx
1100
S[6,2,4,0][15:0]
S[12][15:0]
1xx
1101
S[7,3,5,1][15:0]
S[13][15:0]
S1110
WIDTH[2:0]=011 (x8 device width)
WIDTH[2:0]=010 (x4 device width)
xxx
00xx
S[7:0][15:0]
S[3:0][15:0]
SC01xx
D[7:0][15:0]
1001
1010
S[10][15:0]
1011
S[11][15:0]
Q[3:0][15:0]
1111
S[15][15:0]
SC[3:0]
D[0][15:0]
Q[0][15:0]
D[1:0][15:0]
101x
110x
S[13:12][15:0]
111x
S[15:14][15:0]
SC[3:0]
D[1:0][15:0]
Q[1:0][15:0]
Q[7:0][15:0]
10xx
S[11:8][15:0]
11xx
S[15:12][15:0]
SC[3:0]
D[3:0][15:0]
Q[3:0][15:0]
WIDTH[2:0]=011 (x8 device width)
0xxx
S[7:0][15:0]
1xxx
S[15:8][15:0]
SC[3:0]
D[7:0][15:0]
Q[7:0][15:0]
WIDTH[2:0]=100 (x16 device width)
xxxx
S[15:0][15:0]
SC[3:0]
D[15:0][15:0]
Q[15:0][15:0]
a
a
a) EDX5116ADSE does not support
×
1 and
×
2 device width.
相關(guān)PDF資料
PDF描述
EDX5116ADSE-3B-E 512M bits XDR⑩ DRAM
EDX5116ADSE-3C-E 512M bits XDR⑩ DRAM
EDX5116ADSE-4D-E 512M bits XDR⑩ DRAM
EDX5116ADSE-3A-E 512M bits XDR⑩ DRAM
EDZ20B Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EDX5116ADSE-3A-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits XDR⑩ DRAM
EDX5116ADSE-3B-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits XDR⑩ DRAM
EDX5116ADSE-3C-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits XDR? DRAM
EDX5116ADSE-4D-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits XDR⑩ DRAM
EDXSPECTRUMDAT/5962R8773901VDA 制造商:Analog Devices 功能描述:SPECTRUM ANALYSIS - Literature
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*