參數(shù)資料
型號： EDX5116ADSE
廠商： Elpida Memory, Inc.
英文描述： 512M bits XDR⑩ DRAM
中文描述： 512M比特的XDR DRAM的⑩
文件頁數(shù)： 15/78頁
文件大?。?/td> 3311K
代理商： EDX5116ADSE
Data Sheet E1033E30 (Ver. 3.0)
15
EDX5116ADSE
The first request is shown along the vertical axis on the left of
the table. The second request is shown along the horizontal
axis at the top of the table. Each request includes a bank speci-
fication “Ba” and “Bb”. The first and second banks may be the
same, or they may be different. These two subcases for each
interaction are shown along the vertical axis on the left.
There are 32 possible interaction cases altogether. The table
gives each case a label of the form “xyz”, where “x” and “y”
are one of the four operation types (“A” for Activate, “R” for
Read, “W” for Write, or “P” for Precharge) for the first and
second request, respectively, and “z” indicates the same bank
(“s”) or different bank (“d”).
Along the horizontal axis at the bottom of the table are cross
references to four figures (Figure 4 through Figure 7). Each
figure illustrates the eight cases in the corresponding vertical
column. Thus, Figure 4 shows the eight cases when the second
request is an activate operation (“A”). In the following discus-
sion of the cases, only those in which the interaction interval is
greater than t
CYCLE
will be described.
Request Interaction Cases
In Figure 4, the interaction interval for the AAd case is t
RR
.
This parameter is the row-to-row time and is the minimum
interval between activate commands to different banks of a
device.
The interaction interval for the AAs case is t
RC
. This is the
row cycle time parameter and is the minimum interval between
activate commands to same banks of a device. A precharge
operation must be inserted between the two activate opera-
tions.
The interaction interval for the RAs case is t
RDP
+ t
RP
. A pre-
charge operation must be inserted between the read and acti-
vate operation. The minimum interval between a read and a
precharge operation to a bank is t
RDP
. The minimum interval
between a precharge and an activate operation to a bank is t
RP
.
The interaction interval for the WAs case is t
WDP
+ t
RP
. A
precharge operation must be inserted between the read and the
activate operation.The minimum interval between a write and a
precharge operation to a bank is t
WDP
. The minimum interval
between a precharge and an activate operation to a bank is t
RP
.
The interaction interval for the PAs case is t
RP
. The minimum
interval between a precharge and an activate operation to a
bank is t
RP
.
In Figure 5, the interaction interval for the ARs case is t
RCD-R
.
This is the row-to-column-read time parameter and represents
the minimum interval between an activate operation and a read
operation to a bank.
The interaction interval for the RRd and RRs cases is t
CC
. This
is the column-to-column time parameter and represents the
minimum interval between two read operations.
The interaction interval for the WRd and WRs cases is t
Δ
WR
.
This is the write-to-read time parameter and represents the
minimum interval between a write and a read operation to any
banks. See “Read/Write Interaction” on page 28.
The interaction interval for the PRs case is t
RP
+ t
RCD-R
. An
activate operation must be inserted between the precharge and
the read operation. The minimum interval between a precharge
and an activate operation to a bank is t
RP
. The minimum inter-
val between an activate and read operation to a bank is t
RCD-R
.
In Figure 6, the interaction interval for the AWs case is t
RCD-W
.
This is the row-to-column-write timing parameter and repre-
sents the minimum interval between an activate operation and
a write operation to a bank.
The interaction interval for the RWd and RWs cases is t
Δ
RW
.
This is the read-to-write time parameter and represents the
minimum interval between a read and a write operation to any
banks. See “Read/Write Interaction” on page 28.
The interaction interval for the WWd and WWs cases is t
CC
.
This is the column-to-column time parameter and represents
the minimum interval between two write operations.
The interaction interval for the PWs case is t
RP
+ t
RCD-W
. An
activate operation must be inserted between the precharge and
the write operation. The minimum interval between a pre-
charge and an activate operation to a bank is t
RP
. The mini-
mum interval between an activate and a write operation to a
bank is t
RCD-W
.
In Figure 7, the interaction interval for the APs case is t
RAS
.
This parameter is the minimum activate-to-precharge time to a
bank.
The interaction intervals for the RPs and WPs cases are t
RDP
and t
WDP
, respectively. These are the read- or write-to-pre-
charge time parameters to a bank.
The interaction interval for the PPd case is t
PP
. This parameter
is the precharge-to-precharge time and the minimum interval
between precharge commands to different banks of a device.
The interaction interval for the PPs case is t
RC
. This is the row
cycle time parameter and the minimum interval between pre-
charge commands to same banks of a device. An activate oper-
ation must be inserted between the two activate operations.
This activate operation must be placed a time t
RP
after the first,
and a time t
RAS
before the second precharge.
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