參數(shù)資料
型號(hào): K4T1G044QA
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 1Gb A-die DDR2 SDRAM Specification
中文描述: 1GB的芯片DDR2內(nèi)存規(guī)格
文件頁數(shù): 10/28頁
文件大?。?/td> 612K
代理商: K4T1G044QA
Page 10 of 28
Rev. 1.1 Aug. 2005
DDR2 SDRAM
1G A-die DDR2 SDRAM
1Gb Addressing
* Reference information: The following tables are address mapping information for other densities.
256Mb
512Mb
2Gb
4Gb
Configuration
256Mb x4
128Mb x 8
64Mb x16
# of Bank
8
8
8
Bank Address
BA0 ~ BA2
BA0 ~ BA2
BA0 ~ BA2
Auto precharge
A
10
/AP
A
10
/AP
A
10
/AP
Row Address
A
0
~ A
13
A
0
~ A
13
A
0
~ A
12
Column Address
A
0
~ A
9,
A
11
A
0
~ A
9
A
0
~ A
9
Configuration
64Mb x4
32Mb x 8
16Mb x16
# of Bank
4
4
4
Bank Address
BA0,BA1
BA0,BA1
BA0,BA1
Auto precharge
A
10
/AP
A
10
/AP
A
10
/AP
Row Address
A
0
~ A
12
A
0
~ A
12
A
0
~ A
12
Column Address
A
0
~ A
9,
A
11
A
0
~ A
9
A
0
~ A
8
Configuration
128Mb x4
64Mb x 8
32Mb x16
# of Bank
4
4
4
Bank Address
BA0,BA1
BA0,BA1
BA0,BA1
Auto precharge
A10/AP
A10/AP
A10/AP
Row Address
A0 ~ A13
A0 ~ A13
A0 ~ A12
Column Address
A0 ~ A9,A11
A0 ~ A9
A0 ~ A9
Configuration
512Mb x4
256Mb x 8
128Mb x16
# of Bank
8
8
8
Bank Address
BA0 ~ BA2
BA0 ~ BA2
BA0 ~ BA2
Auto precharge
A10/AP
A10/AP
A10/AP
Row Address
A0 ~ A14
A0 ~ A14
A0 ~ A13
Column Address
A0 ~ A9,A11
A0 ~ A9
A0 ~ A9
Configuration
1 Gb x4
512Mb x 8
256Mb x16
# of Bank
8
8
8
Bank Address
BA0 ~ BA2
BA0 ~ BA2
BA0 ~ BA2
Auto precharge
A10/AP
A10/AP
A10/AP
Row Address
A0 - A15
A0 - A15
A0 - A14
Column Address/page size
A0 - A9,A11
A0 - A9
A0 - A9
相關(guān)PDF資料
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K4T1G044QA-ZCD5 1Gb A-die DDR2 SDRAM Specification
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