參數(shù)資料
型號： K4T1G164QA-ZCD5
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 1Gb A-die DDR2 SDRAM Specification
中文描述： 1GB的芯片DDR2內(nèi)存規(guī)格
文件頁數(shù)： 12/28頁
文件大?。?/td> 612K
代理商： K4T1G164QA-ZCD5
Page 12 of 28
Rev. 1.1 Aug. 2005
DDR2 SDRAM
1G A-die DDR2 SDRAM
Operating Temperature Condition
Note :
1. Operating Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51.2
standard.
2. At 85 - 95
°
C operation temperature range, doubling refresh commands in frequency to a 32ms period ( tREFI=3.9 us ) is required, and to enter to self
refresh mode at this temperature range, an EMRS command is required to change internal refresh rate.
Input DC Logic Level
Input AC Logic Level
AC Input Test Conditions
Notes:
1. Input waveform timing is referenced to the input signal crossing through the V
IH/IL
(AC)
level applied to the device under test.
2. The input signal minimum slew rate is to be maintained over the range from V
REF
to V
IH
(AC) min for rising edges and the range from V
REF
to V
IL
(AC)
max for falling edges as shown in the below figure.
3. AC timings are referenced with input waveforms switching from V
IL
(AC) to V
IH
(AC) on the positive transitions and V
IH
(AC) to V
IL
(AC) on the negative
transitions.
Symbol
Parameter
Rating
Units
Notes
TOPER
Operating Temperature
0 to 95
°
C
1, 2, 3
Symbol
Parameter
Min.
Max.
Units
Notes
V
IH
(DC)
V
IL
(DC)
DC input logic high
V
REF
+ 0.125
- 0.3
V
DDQ
+ 0.3
V
REF
- 0.125
V
DC input logic low
V
Symbol
Parameter
DDR2-400, DDR2-533
DDR2-667
Units
Min.
Max.
Min.
Max.
V
IH
(AC)
AC input logic high
V
REF
+ 0.250
-
V
REF
+ 0.200
V
V
IL
(AC)
AC input logic low
-
V
REF
- 0.250
V
REF
- 0.200
V
Symbol
Condition
Value
Units
Notes
V
REF
Input reference voltage
0.5 * V
DDQ
1.0
V
1
V
SWING(MAX)
SLEW
Input signal maximum peak to peak swing
V
1
Input signal minimum slew rate
1.0
V/ns
2, 3
V
DDQ
V
IH
(AC) min
V
IH
(DC) min
V
REF
V
IL
(DC) max
V
IL
(AC) max
V
SS
< AC Input Test Signal Waveform >
V
SWING(MAX)
delta TR
delta TF
V
REF
- V
IL
(AC) max
delta TF
Falling Slew =
Rising Slew =
V
IH
(AC) min - V
REF
delta TR
相關(guān)PDF資料
PDF描述
K4T1G164QA-ZCE6 1Gb A-die DDR2 SDRAM Specification
K4T1G044QM-ZCCC 1Gb M-die DDR2 SDRAM Specification
K4T1G084QM-ZCCC 1Gb M-die DDR2 SDRAM Specification
K4T1G164QM-ZCCC 1Gb M-die DDR2 SDRAM Specification
K4T1G044QM 1Gb M-die DDR2 SDRAM Specification
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4T1G164QA-ZCE6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb A-die DDR2 SDRAM Specification
K4T1G164QD 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb D-die DDR2 SDRAM Specification
K4T1G164QD-ZCE6000 制造商:Samsung Semiconductor 功能描述:
K4T1G164QE 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Consumer Memory
K4T1G164QE-HCE7000 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb E-die DDR2 SDRAM 60FBGA/84FBGA with Lead-Free & Halogen-Free (RoHS compliant)
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*