參數(shù)資料
型號(hào)： K4T1G044QA-ZCE6
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 1Gb A-die DDR2 SDRAM Specification
中文描述： 1GB的芯片DDR2內(nèi)存規(guī)格
文件頁(yè)數(shù)： 13/28頁(yè)
文件大?。?/td> 612K
代理商： K4T1G044QA-ZCE6
Page 13 of 28
Rev. 1.1 Aug. 2005
DDR2 SDRAM
1G A-die DDR2 SDRAM
Differential input AC logic Level
Notes :
1. V
ID
(AC) specifies the input differential voltage |VTR -VCP | required for switching, where VTR is the true input signal (such as CK, DQS, LDQS or
UDQS) and VCP is the complementary input signal (such as CK, DQS, LDQS or UDQS). The minimum value is equal to V
IH
(AC) - V
IL
(AC).
2. The typical value of V
IX
(AC) is expected to be about 0.5 * V
DDQ
of the transmitting device and V
IX
(AC) is expected to track variations in V
DDQ
. VIX(AC)
indicates the voltage at which differential input signals must cross.
Differential AC output parameters
Note :
1. The typical value of V
OX
(AC) is expected to be about 0.5 * V
DDQ
of the transmitting device and V
OX
(AC) is expected to track variations in V
DDQ
.
V
OX
(AC) indicates the voltage at which differential output signals must cross.
Symbol
Parameter
Min.
Max.
Units
Notes
V
ID
(AC)
AC differential input voltage
0.5
V
DDQ
+ 0.6
V
1
V
IX
(AC)
AC differential cross point voltage
0.5 * V
DDQ
- 0.175
0.5 * V
DDQ
+ 0.175
V
2
Symbol
Parameter
Min.
Max.
Units
Note
V
OX
(AC)
AC differential cross point voltage
0.5 * V
DDQ
- 0.125
0.5 * V
DDQ
+ 0.125
V
1
V
DDQ
Crossing point
V
SSQ
V
TR
V
CP
V
ID
V
IX or
V
OX
< Differential signal levels >
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