- 您現(xiàn)在的位置：買賣IC網 > PDF目錄374284 > K4T1G164QM-ZCD5 (SAMSUNG SEMICONDUCTOR CO. LTD.) 1Gb M-die DDR2 SDRAM Specification PDF資料下載
參數資料
| 型號： | K4T1G164QM-ZCD5 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1Gb M-die DDR2 SDRAM Specification |
| 中文描述： | 1Gb的的M -模DDR2 SDRAM的規(guī)格 |
| 文件頁數： | 12/28頁 |
| 文件大小： | 612K |
| 代理商： | K4T1G164QM-ZCD5 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁當前第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁
Page 12 of 28
Rev. 1.1 Aug. 2005
DDR2 SDRAM
1G A-die DDR2 SDRAM
Operating Temperature Condition
Note :
1. Operating Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51.2
standard.
2. At 85 - 95
°
C operation temperature range, doubling refresh commands in frequency to a 32ms period ( tREFI=3.9 us ) is required, and to enter to self
refresh mode at this temperature range, an EMRS command is required to change internal refresh rate.
Input DC Logic Level
Input AC Logic Level
AC Input Test Conditions
Notes:
1. Input waveform timing is referenced to the input signal crossing through the V
IH/IL
(AC)
level applied to the device under test.
2. The input signal minimum slew rate is to be maintained over the range from V
REF
to V
IH
(AC) min for rising edges and the range from V
REF
to V
IL
(AC)
max for falling edges as shown in the below figure.
3. AC timings are referenced with input waveforms switching from V
IL
(AC) to V
IH
(AC) on the positive transitions and V
IH
(AC) to V
IL
(AC) on the negative
transitions.
Symbol
Parameter
Rating
Units
Notes
TOPER
Operating Temperature
0 to 95
°
C
1, 2, 3
Symbol
Parameter
Min.
Max.
Units
Notes
V
IH
(DC)
V
IL
(DC)
DC input logic high
V
REF
+ 0.125
- 0.3
V
DDQ
+ 0.3
V
REF
- 0.125
V
DC input logic low
V
Symbol
Parameter
DDR2-400, DDR2-533
DDR2-667
Units
Min.
Max.
Min.
Max.
V
IH
(AC)
AC input logic high
V
REF
+ 0.250
-
V
REF
+ 0.200
V
V
IL
(AC)
AC input logic low
-
V
REF
- 0.250
V
REF
- 0.200
V
Symbol
Condition
Value
Units
Notes
V
REF
Input reference voltage
0.5 * V
DDQ
1.0
V
1
V
SWING(MAX)
SLEW
Input signal maximum peak to peak swing
V
1
Input signal minimum slew rate
1.0
V/ns
2, 3
V
DDQ
V
IH
(AC) min
V
IH
(DC) min
V
REF
V
IL
(DC) max
V
IL
(AC) max
V
SS
< AC Input Test Signal Waveform >
V
SWING(MAX)
delta TR
delta TF
V
REF
- V
IL
(AC) max
delta TF
Falling Slew =
Rising Slew =
V
IH
(AC) min - V
REF
delta TR
相關PDF資料 |
PDF描述 |
|---|---|
| K4T51043QC-ZLCC | DIN Audio Connector; No. of Contacts:8; Contact Termination:Solder; Gender:Male RoHS Compliant: Yes |
| K4T51043QC-ZCLCC | 512Mb C-die DDR2 SDRAM |
| K4T51043QC-ZCLD5 | 512Mb C-die DDR2 SDRAM |
| K4T51043QC-ZCLD6 | CAP 33PF 3000V 5% NP0(C0G) SMD-1808 TR-7 PLATED-NI/SN |
| K4T51043QC-ZCE6 | 512Mb C-die DDR2 SDRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| K4T1G164QQ | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Q-die DDR2 SDRAM Specification |
| K4T1G164QQ-HC(L)E6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Q-die DDR2 SDRAM Specification |
| K4T1G164QQ-HC(L)E7 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Q-die DDR2 SDRAM Specification |
| K4T1G164QQ-HC(L)F7 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Q-die DDR2 SDRAM Specification |
| K4T1G164QQ-HCE6000 | 制造商:Samsung SDI 功能描述:DRAM Chip DDR2 SDRAM 1G-Bit 64Mx16 1.8V 84-Pin FBGA Tray |
發(fā)布緊急采購，3分鐘左右您將得到回復。