參數(shù)資料
型號(hào)： K4S643233H-F1L
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： Mobile-SDRAM
中文描述： 移動(dòng)SDRAM的
文件頁(yè)數(shù)： 4/12頁(yè)
文件大?。?/td> 141K
代理商： K4S643233H-F1L
K4S643233H - F(H)E/N/G/C/L/F
February 2004
Mobile-SDRAM
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
= -25 to 85
°
C for Extended, -25 to 70
°
C for Commercial)
ABSOLUTE MAXIMUM RATINGS
NOTES:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Parameter
Symbol
Value
Unit
Voltage on any pin relative to V
ss
V
IN
, V
OUT
-1.0 ~ 4.6
V
Voltage on V
DD
supply relative to V
ss
V
DD
, V
DDQ
-1.0 ~ 4.6
V
Storage temperature
T
STG
-55 ~ +150
°
C
Power dissipation
P
D
1.0
W
Short circuit current
I
OS
50
mA
NOTES :
1. VIH (max) = 5.3V AC.The overshoot voltage duration is
≤
3ns.
2. VIL (min) = -2.0V AC. The undershoot voltage duration is
≤
3ns.
3. Any input 0V
≤
VIN
≤
VDDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with tri-state outputs.
4. Dout is disabled, 0V
≤
VOUT
≤
VDDQ.
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply voltage
V
DD
2.7
3.0
3.6
V
V
DDQ
2.7
3.0
3.6
V
Input logic high voltage
V
IH
2.2
3.0
V
DDQ
+ 0.3
V
1
Input logic low voltage
V
IL
-0.3
0
0.5
V
2
Output logic high voltage
V
OH
2.4
-
-
V
I
OH
= -2mA
Output logic low voltage
V
OL
-
-
0.4
V
I
OL
= 2mA
Input leakage current
I
LI
-10
-
10
uA
3
CAPACITANCE
(V
DD
= 3.0V & 3.3V, T
A
= 23
°
C, f = 1MHz, V
REF
=0.9V
±
50 mV)
Pin
Symbol
Min
Max
Unit
Note
Clock
C
CLK
-
4.0
pF
RAS, CAS, WE, CS, CKE
C
IN
-
4.0
pF
DQM
C
IN
-
4.0
pF
Address
C
ADD
-
4.0
pF
DQ
0
~ DQ
31
C
OUT
-
6.0
pF
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