參數(shù)資料
型號(hào)： K4T51043QC-ZCCC
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 512Mb C-die DDR2 SDRAM
中文描述： 葷的512Mb芯片DDR2內(nèi)存
文件頁數(shù)： 14/29頁
文件大?。?/td> 629K
代理商： K4T51043QC-ZCCC
Page 14 of 29
Rev. 1.4 Aug. 2005
DDR2 SDRAM
512Mb C-die DDR2 SDRAM
OCD default characteristics
Notes:
1. Absolute Specifications (0°C
≤
T
CASE
≤
+95°C; VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V)
2. Impedance measurement condition for output source dc current: V
DDQ
= 1.7V; VOUT = 1420mV; (VOUT-VDDQ)/Ioh must be less than 23.4 ohms for
values of VOUT between VDDQ and VDDQ- 280mV. Impedance measurement condition for output sink dc current: VDDQ = 1.7V; VOUT = 280mV;
VOUT/Iol must be less than 23.4 ohms for values of VOUT between 0V and 280mV.
3. Mismatch is absolute value between pull-up and pull-dn, both are measured at same temperature and voltage.
4. Slew rate measured from V
IL
(AC) to V
IH
(AC).
5. The absolute value of the slew rate as measured from DC to DC is equal to or greater than the slew rate as measured from AC to AC. This is guaran-
teed by design and characterization.
6. This represents the step size when the OCD is near 18 ohms at nominal conditions across all process and represents only the DRAM uncertainty.
Output slew rate load :
7. DRAM output slew rate specification applies to 400Mb/sec/pin, 533Mb/sec/pin, 667Mb/sec/pin and 800Mb/sec/pin speed bins.
8. Timing skew due to DRAM output slew rate mis-match between DQS / DQS and associated DQs is included in tDQSQ and tQHS specification.
Description
Parameter
Min
Nom
Max
Unit
Notes
Output impedance
Normal 18ohms
See full strength default driver characteristics
ohms
1,2
Output impedance step size for OCD calibration
0
1.5
ohms
6
Pull-up and pull-down mismatch
0
4
ohms
1,2,3
Output slew rate
Sout
1.5
5
V/ns
1,4,5,6,7,8
25 ohms
V
TT
Output
(V
OUT)
Reference
Point
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