參數(shù)資料
型號： K5A3280YBC-T855
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： MCP MEMORY
中文描述： MCP的記憶
文件頁數(shù)： 2/45頁
文件大?。?/td> 625K
代理商： K5A3280YBC-T855
MCP MEMORY
K5A3x80YT(B)C
Revision 0.0
November 2002
- 2 -
Preliminary
Multi-Chip Package MEMORY
32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 8M(1Mx8/512Kx16) Full CMOS SRAM
The K5A3x80YT(B)C featuring single 3.0V power supply is a
Multi Chip Package Memory which combines 32Mbit Dual Bank
Flash and 8Mbit fCMOS SRAM.
The 32Mbit Flash memory is organized as 4M x8 or 2M x16 bit
and 8Mbit SRAM is organized as 1M x8 or 512K x16 bit. The
memory architecture of flash memory is designed to divide its
memory arrays into 71 blocks and this provides highly flexible
erase and program capability. This device is capable of reading
data from one bank while programming or erasing in the other
bank with dual bank organization.
The Flash memory performs a program operation in units of 8 bits
(Byte) or 16 bits (Word) and erases in units of a block. Single or
multiple blocks can be erased. The block erase operation is com-
pleted for typically 0.7sec.
The 8Mbit SRAM supports low data retention voltage for battery
backup operation with low data retention current.
The K5A3x80YT(B)C is suitable for the memory of mobile com-
munication system to reduce mount area. This device is available
in 69-ball TBGA Type package.
FEATURES
Power Supply voltage : 2.7V to 3.3V
Organization
- Flash : 4,194,304 x 8 / 2,097,152 x 16 bit
- SRAM : 1,048,576 x 8 / 524,288 x 16 bit
Access Time (@2.7V)
- Flash : 70 ns, SRAM : 55 ns
Power Consumption (typical value)
- Flash Read Current : 14 mA (@5MHz)
Program/Erase Current : 15 mA
Standby mode/Autosleep mode : 5
μ
A
Read while Program or Read while Erase : 25 mA
- SRAM Operating Current : 22 mA
Standby Current : 0.5
μ
A
Secode(Security Code) Block : Extra 64KB Block (Flash)
Block Group Protection / Unprotection (Flash)
Flash Bank Size : 8Mb / 24Mb , 16Mb / 16Mb
Flash Endurance : 100,000 Program/Erase Cycles Minimum
SRAM Data Retention : 1.5 V (min.)
Industrial Temperature : -40
°
C ~ 85
°
C
Package : 69-ball TBGA Type - 8 x 11mm, 0.8 mm pitch
1.2mm(max.) Thickness
GENERAL DESCRIPTION
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
BALL CONFIGURATION
BALL DESCRIPTION
Ball Name
Description
A
0
to A
18
Address Input Balls (Common)
A-1, A
19
to A
20
Address Input Balls (Flash Memory)
DQ
0
to DQ
15
Data Input/Output Balls (Common)
RESET
Hardware Reset (Flash Memory)
WP/ACC
Write Protection / Acceleration Program
(Flash Memory)
Vcc
S
Vcc
F
Vss
Power Supply (SRAM)
Power Supply (Flash Memory)
Ground (Common)
UB
Upper Byte Enable (SRAM)
LB
Lower Byte Enable (SRAM)
BYTE
S
BYTE
F
SA
BYTE
S
Control (SRAM)
BYTE
F
Control (Flash Memory)
Address Inputs (SRAM)
CE
F
CS1
S
CS2
S
WE
Chip Enable (Flash Memory)
Chip Enable (SRAM Low Active)
Chip Enable (SRAM High Active)
Write Enable (Common)
OE
Output Enable (Common)
RY/BY
Ready/Busy (Flash memory)
N.C
No Connection
Top View (Ball Down)
A7
UB
A8
A3
A6
RESET
LB
CS2
S
A19
A2
A5
A18
RY/BY
A20
A9
A4
DQ6
CE
F
OE
DQ9
DQ3
DQ4
DQ13
1
2
3
4
5
6
A
B
C
D
E
F
WP/
ACC
WE
V
SS
A10
DQ1
A0
A1
A17
A11
A12
A15
A13
N.C
A14
SA
A16
/A-1
BYTE
F
7
8
N.C
DQ8
DQ2
DQ11
DQ5
H
DQ14
CS1
S
DQ0
DQ10 Vcc
F
Vcc
S
DQ12
G
DQ7
Vss
BYTES
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
9
10
K
J
69 Ball TBGA , 0.8mm Pitch
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K5A3280YTC-T755 制造商:Samsung Electro-Mechanics 功能描述:MCP 32M BIT (4M X 8/2M X 16) DUAL BANK NOR FLASH MEMORY / 8M(1M X 8/512K X 16) FULL CMOS SRAM, PBGA69
K5A3280YTC-T755000 制造商:Samsung Electro-Mechanics 功能描述:MCP 32M BIT (4M X 8/2M X 16) DUAL BANK NOR FLASH MEMORY / 8M(1M X 8/512K X 16) FULL CMOS SRAM, PBGA69
K5A3280YTC-T855 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MCP MEMORY
K5A3340YBC-T755 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
K5A3340YBC-T855 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
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