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參數(shù)資料
| 型號： | K4S643233H-FHE |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Mobile-SDRAM |
| 中文描述： | 移動SDRAM的 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大小： | 141K |
| 代理商： | K4S643233H-FHE |
K4S643233H - F(H)E/N/G/C/L/F
February 2004
Mobile-SDRAM
DC CHARACTERISTICS
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
= -25 to 85
°
C for Extended, -25 to 70
°
C for Commercial)
NOTES:
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Internal TCSR can be supported.
In commercial Temp : Max 40
°
C/Max 70
°
C, In extended Temp : Max 40
°
C/Max 85
°
C
4. K4S643233H-F(H)E/C**
5. K4S643233H-F(H)N/L**
6. K4S643233H-F(H)G/F**
7. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).
Parameter
Symbol
Test Condition
Version
Unit
Note
-60
-75
-1H
-1L
Operating Current
(One Bank Active)
I
CC1
Burst length = 1
t
RC
≥
t
RC
(min)
I
O
= 0 mA
85
80
75
75
mA
1
Precharge Standby Current
in power-down mode
I
CC2
P
CKE
≤
V
IL
(max), t
CC
= 10ns
0.5
mA
I
CC2
PS CKE & CLK
≤
V
IL
(max), t
CC
=
∞
0.5
Precharge Standby Current
in non power-down mode
I
CC2
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during
20ns
11
mA
I
CC2
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
8
Active Standby Current
in power-down mode
I
CC3
P
CKE
≤
V
IL
(max), t
CC
= 10ns
5
mA
I
CC3
PS CKE & CLK
≤
V
IL
(max), t
CC
=
∞
5
Active Standby Current
in non power-down mode
(One Bank Active)
I
CC3
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during
20ns
22
mA
I
CC3
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
22
mA
Operating Current
(Burst Mode)
I
CC
4
I
O
= 0 mA
Page burst
4Banks Activated
t
CCD
= 2CLKs
100
95
75
75
mA
1
Refresh Current
I
CC
5
t
RC
≥
t
RC
(min)
145
135
120
120
mA
2
Self Refresh Current
I
CC
6
CKE
≤
0.2V
-E/C
1500
uA
4
-N/L
350
5
-G/F
Internal TCSR
Max 40
Max 85/70
°
C
3
Full Array
235
350
uA
6
1/2 of Full Array
210
290
1/4 of Full Array
195
270
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相關代理商/技術參數(shù) |
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|---|---|
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