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CHAPTER 26 ELECTRICAL SPECIFICATIONS (EXPANDED-SPECIFICATION PRODUCTS OF
μ
PD780076Y, 780078Y, 78F0078Y)
User’s Manual U14260EJ3V1UD
Flash Memory Programming Characteristics (T
A
= +10 to +40
°
C, V
DD
= 2.7 to 5.5 V, V
SS
= AV
SS
= 0 V)
(1) Write erase characteristics
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Operating frequency
f
X
3.0 V
≤
V
DD
≤
5.5 V
1.0
8.38
MHz
2.7 V
≤
V
DD
< 3.0 V
1.0
5.00
MHz
V
PP
supply voltage
V
PP2
During flash memory programming
9.7
10.0
10.3
V
V
DD
supply current
I
DD
When
f
X
= 8.38 MHz
V
DD
= 5.0 V
±
10%
24
mA
V
PP
= V
PP2
V
DD
= 3.0 V
±
10%
17
mA
f
X
= 5.00 MHz
V
DD
= 3.0 V
±
10%
12
mA
V
PP
supply current
I
PP
When V
PP
= V
PP2
75
100
mA
Step erase time
Note 1
T
er
0.99
1.0
1.01
s
Overall erase time per area
Note 2
T
era
When step erase time = 1 s
20
s/area
Step write time
T
wr
50
100
μ
s
Overall write time per word
Note 3
T
wrw
When step write time = 100
μ
s
1000
μ
s
Number of rewrites per area
Note 4
C
erwr
1 erase + 1 write after erase = 1 rewrite
20
Times/area
Notes
1.
The recommended setting value of the step erase time is 1 s.
2.
The prewrite time before erasure and the erase verify time (writeback time) are not included.
3.
The actual write time per word is 100
μ
s longer. The internal verify time during or after a write is not
included.
4.
When a product is first written after shipment, “erase
→
write” and “write only” are both taken as one
rewrite.
Example:
P: Write, E: Erase
Shipped product
→
P
→
E
→
P
→
E
→
P: 3 rewrites
Shipped product
→
E
→
P
→
E
→
P
→
E
→
P: 3 rewrites
(2) Serial write operation characteristics
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Set time from V
DD
↑
to V
PP
↑
t
DP
10
μ
s
Release time from V
PP
↑
to RESET
↑
t
PR
1.0
μ
s
V
PP
pulse input start time from
RESET
↑
t
RP
1.0
μ
s
V
PP
pulse high-/low-level width
t
PW
8.0
μ
s
V
PP
pulse input end time from
RESET
↑
t
RPE
20
ms
V
PP
pulse low-level input voltage
V
PPL
0.8V
DD
V
DD
1.2V
DD
V
V
PP
pulse high-level input voltage
V
PPH
9.7
10.0
10.3
V