
S1C6N3B0 TECHNICAL MANUAL
EPSON
65
CHAPTER 6: ELECTRICAL CHARACTERISTICS
6.6 Oscillation Characteristics
Oscillation characteristics will vary according to different conditions (elements used, board pattern). Use
the following characteristics are as reference values.
Crystal oscillation
Item
Oscillation start voltage
Oscillation stop voltage
Built-in capacitance (drain)
Frequency/voltage deviation
Frequency/IC deviation
Frequency adjustment range
Harmonic oscillation start voltage
Permitted leak resistance
Symbol
Vsta
Vstp
CD
f/V
f/IC
f/CG
Vhho
Rleak
Unit
V
pF
ppm
V
M
Max.
5
10
Typ.
14
40
Min.
0.8
1.1
0.8
1.1
-10
30
3.6
200
Condition
tsta
≤3sec (Heavy load protection mode ON)
tsta
≤3sec (Heavy load protection mode OFF)
tstp
≤10sec (Heavy load protection mode ON)
tstp
≤10sec (Heavy load protection mode OFF)
Including the parasitic capacitance inside the IC (in chip)
VDD=0.8 to 3.6V (Heavy load protection mode ON)
VDD=1.1 to 3.6V (Heavy load protection mode OFF)
CG=5 to 25pF
CG=5pF (VDD)
Between OSC1 and VDD, VSS
Unless otherwise specified:
VDD=3.0V, VSS=0V, fOSC=32.768kHz, Crystal: Q13MC146, CG=25pF, CD=built-in, Ta=25
°C
CR oscillation
Item
Oscillation frequency dispersion
Oscillation start voltage
Oscillation start time
Oscillation stop voltage
Symbol
fOSCCR
Vsta
tsta
Vstp
Unit
%
V
mS
V
Max.
+20
+30
3
Typ.
40kHz
500kHz
Min.
-20
-30
0.8
1.7
0.8
1.7
Condition
6N3B0 (Heavy load protection ON, VDD=0.8 to 3.6V)
6N3B0 (Heavy load protection OFF, VDD=1.1 to 3.6V)
6A3B0 (VDD=1.7 to 3.6V)
6N3B0
6A3B0
6N3B0
6A3B0
Unless otherwise specified:
VDD=3.0V, VSS=0V, RCR=1M
, Ta=25°C
Ceramic oscillation
Item
Oscillation start voltage
Oscillation start time
Symbol
Vsta
tsta
Unit
V
mS
Max.
20
Typ.
Min.
1.7
Condition
Unless otherwise specified:
VDD=3.0V, VSS=0V, Ceramic oscillator: CSA1.0MG, CGC=CDC=100pF, Ta=25
°C