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參數(shù)資料
| 型號： | H5MS5162DFR-K3M |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 32M X 16 DDR DRAM, 0.5 ns, PBGA60 |
| 封裝： | 8 X 10 MM, 1 MM HEIGHT, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, FBGA-60 |
| 文件頁數(shù)： | 56/62頁 |
| 文件大?。?/td> | 1314K |
| 代理商： | H5MS5162DFR-K3M |
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Rev 1.3 / Apr. 2009
6
11
Mobile DDR SDRAM 512Mbit (32M x 16bit)
H5MS5162DFR Series
INFORMATION for Hynix KNOWN GOOD DIE
With the advent of Multi-Chip package (MCP), Package on Package (PoP) and System in a Package (SiP) applications,
customer demand for Known Good Die (KGD) has increased.
Requirements for smaller form factors and higher memory densities are fueling the need for Wafer-level memory solu-
tions due to their superior flexibility. Hynix Known Good Die (KGD) products can be used in packaging technologies
such as systems-in-a-package (SIP) and multi-chip package (MCP) to reduce the board area required, making them
ideal for hand-held PCs, and many other portable digital applications.
Hynix Mobile SDRAM will be able to continue its constant effort of enabling the advanced package products of all appli-
cation customers.
- Please Contact Hynix Office for Hynix KGD product availability and informations.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| H6101NL | DATACOM TRANSFORMER FOR GENERAL PURPOSE APPLICATION(S) |
| H6E1PC03130001 | 105 CONTACT(S), MULTIWAY RACK AND PANEL CONN, CRIMP, PLUG |
| H6E1PX03130001 | 105 CONTACT(S), MULTIWAY RACK AND PANEL CONN, PLUG |
| H6E2PC03130001 | MULTIWAY RACK AND PANEL CONN, CRIMP, PLUG |
| H6E2PX03130001 | MULTIWAY RACK AND PANEL CONN, PLUG |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| H5MS5162DFR-L3M | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mb (32Mx16bit) Mobile DDR SDRAM |
| H5MS5162EFR | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:536,870,912-bit CMOS Low Power Double Data Rate Synchronous DRAM (Mobile DDR SDRAM) |
| H5MS5162EFR-J3M | 制造商:SK Hynix Inc 功能描述:SDRAM MOBILE DDR 512MB (X16) 60FBGA 制造商:SK Hynix Inc 功能描述:SDRAM, MOBILE DDR, 512MB (X16), 60FBGA 制造商:SK Hynix Inc 功能描述:SDRAM, MOBILE DDR, 512MB (X16), 60FBGA, Memory Type:DRAM - Synchronous, Memory C 制造商:SK Hynix Inc 功能描述:SDRAM, MOBILE DDR, 512MB (X16), 60FBGA, Memory Type:DRAM - Synchronous, Memory Configuration:32M x 16, Memory Case Style:FBGA, No. of Pins:60, IC Interface Type:LVCMOS, Operating Temperature Min:-30C, Operating Temperature Max:85C, , RoHS Compliant: Yes |
| H5MS5162FFR-E3M | 制造商:SK Hynix Inc 功能描述: |
| H5N1503P | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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