參數(shù)資料
型號(hào)： H5MS5162DFR-K3M
廠商： HYNIX SEMICONDUCTOR INC
元件分類(lèi)： DRAM
英文描述： 32M X 16 DDR DRAM, 0.5 ns, PBGA60
封裝： 8 X 10 MM, 1 MM HEIGHT, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, FBGA-60
文件頁(yè)數(shù)： 14/62頁(yè)
文件大?。?/td> 1314K
代理商： H5MS5162DFR-K3M
Rev 1.3 / Apr. 2009
21
11
Mobile DDR SDRAM 512Mbit (32M x 16bit)
H5MS5162DFR Series
Mobile DDR OUTPUT SLEW RATE CHARACTERRISTICS
Note:
1. Measured with a test load of 20pF connected to VSSQ
2. Output slew rate for rising edge is measured between VILD(DC) to VIHD(AC) and for falling edge between VIHD(DC) to VILD(AC)
3. The ratio of pull-up slew rate to pull-down slew rate is specified for the same temperature and voltage, over the entire temperature
and voltage range. For a given output, it represents the maximum difference between pull-up and pull-down drivers due to process
variation.
Mobile DDR AC OVERSHOOT / UNDERSHOOT SPECIFICATION
Note:
1. This specification is intended for devices with no clamp protection and is guaranteed by design.
Parameter
Min
Max
Unit
Note
Pull-up and Pull-Down Slew Rate for Full Strength Driver
0.7
2.5
V/ns
1, 2
Pull-up and Pull-Down Slew Rate for Half Strength Driver
0.3
1.0
V/ns
1, 2
Output Slew Rate Matching ratio (Pull-up to Pull-down)
0.7
1.4
-
3
Parameter
Specification
Maximum peak amplitude allowed for overshoot
0.5V
Maximum peak amplitude allowed for undershoot
0.5V
The area between overshoot signal and VDD must be less than or equal to
3V-ns
The area between undershoot signal and GND must be less than or equal to
3V-ns
2.5V
2.0V
1.5V
1.0V
0.5V
0.0V
-0.5V
Overshoot
Undershoot
VDD
VSS
Max. Amplitude = 0.5V
Max. Area = 3V-ns
Time (ns)
V
o
lt
a
g
e
(V
)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
H5MS5162DFR-L3M 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:512Mb (32Mx16bit) Mobile DDR SDRAM
H5MS5162EFR 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:536,870,912-bit CMOS Low Power Double Data Rate Synchronous DRAM (Mobile DDR SDRAM)
H5MS5162EFR-J3M 制造商:SK Hynix Inc 功能描述:SDRAM MOBILE DDR 512MB (X16) 60FBGA 制造商:SK Hynix Inc 功能描述:SDRAM, MOBILE DDR, 512MB (X16), 60FBGA 制造商:SK Hynix Inc 功能描述:SDRAM, MOBILE DDR, 512MB (X16), 60FBGA, Memory Type:DRAM - Synchronous, Memory C 制造商:SK Hynix Inc 功能描述:SDRAM, MOBILE DDR, 512MB (X16), 60FBGA, Memory Type:DRAM - Synchronous, Memory Configuration:32M x 16, Memory Case Style:FBGA, No. of Pins:60, IC Interface Type:LVCMOS, Operating Temperature Min:-30C, Operating Temperature Max:85C, , RoHS Compliant: Yes
H5MS5162FFR-E3M 制造商:SK Hynix Inc 功能描述:
H5N1503P 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
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