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參數(shù)資料
| 型號： | H5MS5162DFR-K3M |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 32M X 16 DDR DRAM, 0.5 ns, PBGA60 |
| 封裝： | 8 X 10 MM, 1 MM HEIGHT, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, FBGA-60 |
| 文件頁數(shù)： | 55/62頁 |
| 文件大?。?/td> | 1314K |
| 代理商： | H5MS5162DFR-K3M |
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Rev 1.3 / Apr. 2009
59
11
Mobile DDR SDRAM 512Mbit (32M x 16bit)
H5MS5162DFR Series
Data mask1,2)
Mobile DDR SDRAM uses a DQ write mask enable signal (DM) which masks write data.
Data masking is only available in the write cycle for Mobile DDR SDRAM. Data masking is available during write, but
data masking during read is not available.
DM command masks burst write data with reference to data strobe signal and it is not related with read data. DM com-
mand can be initiated at both the rising edge and the falling edge of the DQS. DM latency for write operation is zero.
For x16 data I/O, Mobile DDR SDRAM is equipped with LDM and UDM which control DQ0~DQ7 and DQ8~DQ15
respectively.
Note:
1) Mobile SDR SDRAM can mask both read and write data, but the read mask is not supported by Mobile DDR SDRAM.
2) Differences in Functions and Specifications (next table)
Data Masking (Write cycle: BL=4)
Item
Mobile DDR SDRAM
Mobile SDR SDRAM
Data mask
Write mask only
Write mask/Read mask
WRITE
DM
CMD
CK
D0
D1
D3
D0
D1
D3
Hi-
Z
DQS
DQ
Data
Masking
Data
Masking
tDQSS
tDQSL
tDS
tDH
tDQSH
Hi-
Z
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| H5MS5162DFR-L3M | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mb (32Mx16bit) Mobile DDR SDRAM |
| H5MS5162EFR | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:536,870,912-bit CMOS Low Power Double Data Rate Synchronous DRAM (Mobile DDR SDRAM) |
| H5MS5162EFR-J3M | 制造商:SK Hynix Inc 功能描述:SDRAM MOBILE DDR 512MB (X16) 60FBGA 制造商:SK Hynix Inc 功能描述:SDRAM, MOBILE DDR, 512MB (X16), 60FBGA 制造商:SK Hynix Inc 功能描述:SDRAM, MOBILE DDR, 512MB (X16), 60FBGA, Memory Type:DRAM - Synchronous, Memory C 制造商:SK Hynix Inc 功能描述:SDRAM, MOBILE DDR, 512MB (X16), 60FBGA, Memory Type:DRAM - Synchronous, Memory Configuration:32M x 16, Memory Case Style:FBGA, No. of Pins:60, IC Interface Type:LVCMOS, Operating Temperature Min:-30C, Operating Temperature Max:85C, , RoHS Compliant: Yes |
| H5MS5162FFR-E3M | 制造商:SK Hynix Inc 功能描述: |
| H5N1503P | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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