參數(shù)資料
型號(hào): H5MS5162DFR-K3M
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: 32M X 16 DDR DRAM, 0.5 ns, PBGA60
封裝: 8 X 10 MM, 1 MM HEIGHT, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, FBGA-60
文件頁數(shù): 20/62頁
文件大?。?/td> 1314K
代理商: H5MS5162DFR-K3M
Rev 1.3 / Apr. 2009
27
11
Mobile DDR SDRAM 512Mbit (32M x 16bit)
H5MS5162DFR Series
Mobile DDR SDRAM OPERATION
State Diagram
IDLE
ALL BANK
PCG.
AUTO
REFRESH
SELF
REFRESH
PCG.
POWER
DOWN
(E)MRS
SET
WRITE
READ
Precharge
ALL
ACTIVE
POWER
DOWN
ROW
ACTIVE
MRS,
EMRS
REFS
CKEL
REFA
CKEH
ACT
CKEL
CKEH
WRITE
READ
REFSX
COMMAND Input
AUTOMATIC
Sequence
DEEP
POWER
DOWN
POWER
ON
PCG.
ALL
BANKS
Power
applied
DPDS
DPDSX
BURST
STOP
WRITEA
READ
READA
BST
READ A
WRITE A
WRITEA
READA
READ
PRE
SRR
READ
SRR
READ
READA
ACT :
Active
B ST :
B urst
CKEL :
E nter Pow er-D ow n
CKEH :
E xit Pow er-D ow n
D PD S :
E nter D eep
Pow er-D ow n
D PD SX :
E xit D eep Pow er-
D ow nEM R S
E M RS :
E xt. M ode Reg.
Set
M R S :
M ode Register Set
PR E :
Precharge
PR EALL :
Precharge All
B anks
R EFA :
Auto R efresh
R EFS :
E nter Self R efresh
R EFSX :
E xit Self Refresh
R EAD :
R ead w /o Auto
Precharge
R EAD A :
R ead w ith Auto
Precharge
W R ITE :
W rite w /o Auto
Precharge
W R ITEA :
W rite w ith Auto
Precharge
SR R :
Status R egister
R ead
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