參數(shù)資料
型號(hào)： H5MS5162DFR-K3M
廠商： HYNIX SEMICONDUCTOR INC
元件分類： DRAM
英文描述： 32M X 16 DDR DRAM, 0.5 ns, PBGA60
封裝： 8 X 10 MM, 1 MM HEIGHT, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, FBGA-60
文件頁數(shù)： 58/62頁
文件大?。?/td> 1314K
代理商： H5MS5162DFR-K3M
Rev 1.3 / Apr. 2009
61
11
Mobile DDR SDRAM 512Mbit (32M x 16bit)
H5MS5162DFR Series
The Initialization flow sequence is below.
Initialization Waveform Sequence
VDD
VDDQ
/CLK
CLK
CKE
CMD
DM
ADDR
A10
BA0,
BA1
DQ,
DQS
T=200usec
tRP
tMRD
tRFC
tMRD
VDD/VDDQ
Powered up
CLOCK stable
Auto
Refresh
NOP
ARF
PRE
MRS
ARF
ACT
MRS
CODE
RA
CODE
RA
CODE
BA0=L
BA1=L
BA
BA0=L
BA1=H
tRFC
Load
Mode
Register
tCH
tCL
tCK
ALL
BANKS
tIS tIH
tIS
tIH
tIS
tIH
tIS
tIH
DON'T CARE
High-Z
Precharge
All
Auto
Refresh
Load
Extended
Mode
Register
相關(guān)PDF資料
PDF描述
H6101NL DATACOM TRANSFORMER FOR GENERAL PURPOSE APPLICATION(S)
H6E1PC03130001 105 CONTACT(S), MULTIWAY RACK AND PANEL CONN, CRIMP, PLUG
H6E1PX03130001 105 CONTACT(S), MULTIWAY RACK AND PANEL CONN, PLUG
H6E2PC03130001 MULTIWAY RACK AND PANEL CONN, CRIMP, PLUG
H6E2PX03130001 MULTIWAY RACK AND PANEL CONN, PLUG
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
H5MS5162DFR-L3M 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mb (32Mx16bit) Mobile DDR SDRAM
H5MS5162EFR 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:536,870,912-bit CMOS Low Power Double Data Rate Synchronous DRAM (Mobile DDR SDRAM)
H5MS5162EFR-J3M 制造商:SK Hynix Inc 功能描述:SDRAM MOBILE DDR 512MB (X16) 60FBGA 制造商:SK Hynix Inc 功能描述:SDRAM, MOBILE DDR, 512MB (X16), 60FBGA 制造商:SK Hynix Inc 功能描述:SDRAM, MOBILE DDR, 512MB (X16), 60FBGA, Memory Type:DRAM - Synchronous, Memory C 制造商:SK Hynix Inc 功能描述:SDRAM, MOBILE DDR, 512MB (X16), 60FBGA, Memory Type:DRAM - Synchronous, Memory Configuration:32M x 16, Memory Case Style:FBGA, No. of Pins:60, IC Interface Type:LVCMOS, Operating Temperature Min:-30C, Operating Temperature Max:85C, , RoHS Compliant: Yes
H5MS5162FFR-E3M 制造商:SK Hynix Inc 功能描述:
H5N1503P 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
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