參數(shù)資料
型號: H5MS5162DFR-K3M
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: 32M X 16 DDR DRAM, 0.5 ns, PBGA60
封裝: 8 X 10 MM, 1 MM HEIGHT, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, FBGA-60
文件頁數(shù): 39/62頁
文件大小: 1314K
代理商: H5MS5162DFR-K3M
Rev 1.3 / Apr. 2009
44
11
Mobile DDR SDRAM 512Mbit (32M x 16bit)
H5MS5162DFR Series
WRITE to PRECHARGE
Data for any WRITE burst may be followed by a subsequent PRECHARGE command to the same bank (provided Auto
Precharge was not activated). To follow a WRITE without truncating the WRITE burst, tWR should be met as shown in
Fig.
Non-Interrupting Write to Precharge
/CLK
CLK
WRITE
NOP
PRE
BA,
Col
b
Don't Care
1) DI b (n) = Data In to column b (column n)
3 subsequent elements of Data In are applied in the programmed order following DI b.
2) A non-interrupted bursts of 4 are shown.
3) tWR is referenced from the positive clock edge after the last Data In pair.
4) A10 is LOW with the WRITE command (Auto Precharge is disabled)
Command
Address
DQS
DQ
NOP
DM
tDQSS
max
BA
(A or All)
tWR
DI
b
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