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參數(shù)資料
| 型號(hào)： | H5MS5162DFR-K3M |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 32M X 16 DDR DRAM, 0.5 ns, PBGA60 |
| 封裝： | 8 X 10 MM, 1 MM HEIGHT, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, FBGA-60 |
| 文件頁數(shù)： | 26/62頁 |
| 文件大?。?/td> | 1314K |
| 代理商： | H5MS5162DFR-K3M |
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Rev 1.3 / Apr. 2009
32
11
Mobile DDR SDRAM 512Mbit (32M x 16bit)
H5MS5162DFR Series
The first data-out element is edge aligned with the first rising edge of DQS and the successive data-out elements are
edge aligned to successive edges of DQS. This is shown in next figure with a CAS latency of 2 and 3.
Upon completion of a read burst, assuming no other READ command has been initiated, the DQ will go to High-Z.
Read Burst Showing CAS Latency
/CLK
CLK
Do
n
Do
n
READ
NOP
BA,
Col
n
CL =3
CL =2
Don't Care
1) Do
n : Data out from column n
2) BA, Col
n = Bank A, Column n
3) Burst Length = 4; 3 subseqnent elements of Data Out appear in the programmed order following Do
n
4) Shown with nominal tAC, tDQSCK and tDQSQ
Command
Address
DQS
DQ
DQS
DQ
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| H5MS5162DFR-L3M | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mb (32Mx16bit) Mobile DDR SDRAM |
| H5MS5162EFR | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:536,870,912-bit CMOS Low Power Double Data Rate Synchronous DRAM (Mobile DDR SDRAM) |
| H5MS5162EFR-J3M | 制造商:SK Hynix Inc 功能描述:SDRAM MOBILE DDR 512MB (X16) 60FBGA 制造商:SK Hynix Inc 功能描述:SDRAM, MOBILE DDR, 512MB (X16), 60FBGA 制造商:SK Hynix Inc 功能描述:SDRAM, MOBILE DDR, 512MB (X16), 60FBGA, Memory Type:DRAM - Synchronous, Memory C 制造商:SK Hynix Inc 功能描述:SDRAM, MOBILE DDR, 512MB (X16), 60FBGA, Memory Type:DRAM - Synchronous, Memory Configuration:32M x 16, Memory Case Style:FBGA, No. of Pins:60, IC Interface Type:LVCMOS, Operating Temperature Min:-30C, Operating Temperature Max:85C, , RoHS Compliant: Yes |
| H5MS5162FFR-E3M | 制造商:SK Hynix Inc 功能描述: |
| H5N1503P | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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