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參數(shù)資料
| 型號： | H5MS5162DFR-K3M |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 32M X 16 DDR DRAM, 0.5 ns, PBGA60 |
| 封裝： | 8 X 10 MM, 1 MM HEIGHT, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, FBGA-60 |
| 文件頁數(shù)： | 16/62頁 |
| 文件大?。?/td> | 1314K |
| 代理商： | H5MS5162DFR-K3M |
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Rev 1.3 / Apr. 2009
23
11
Mobile DDR SDRAM 512Mbit (32M x 16bit)
H5MS5162DFR Series
Note:
1. IDD specifications are tested after the device is properly initialized
2. Input slew rate is 1V/ns
3. Definitions for IDD:
LOW is defined as VIN ≤ 0.1 * VDDQ
HIGH is defined as VIN ≥ 0.9 * VDDQ
STABLE is defined as inputs stable at a HIGH or LOW level
SWITCHING is defined as
- address and command: inputs changing between HIGH and LOW once per two clock cycles
- data bus inputs: DQ changing between HIGH and LOW once per clock cycle
DM and DQS are STABLE
4. Please contact Hynix office for more information and ability for DPD operation. Deep Power Down operation is a hynix optional
function.
5. IDD values are for full operating range of voltage and temperature.
VDD, VDDQ = 1.7V ~ 1.95V. Temperature = -30oC ~ +85oC
DC CHARACTERISTICS - IDD6
Note:
1. Related numerical values in this 45oC are examples for reference sample value only.
2. With a on-chip temperature sensor, auto temperature compensated self refresh will automatically adjust the interval of self-refresh
operation according to case temperature variations.
Temp.
(oC)
Memory Array
Unit
4 Banks
2 Banks
1 Bank
45
250
220
200
uA
85
500
400
300
uA
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相關(guān)代理商/技術(shù)參數(shù) |
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| H5MS5162DFR-L3M | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mb (32Mx16bit) Mobile DDR SDRAM |
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| H5MS5162EFR-J3M | 制造商:SK Hynix Inc 功能描述:SDRAM MOBILE DDR 512MB (X16) 60FBGA 制造商:SK Hynix Inc 功能描述:SDRAM, MOBILE DDR, 512MB (X16), 60FBGA 制造商:SK Hynix Inc 功能描述:SDRAM, MOBILE DDR, 512MB (X16), 60FBGA, Memory Type:DRAM - Synchronous, Memory C 制造商:SK Hynix Inc 功能描述:SDRAM, MOBILE DDR, 512MB (X16), 60FBGA, Memory Type:DRAM - Synchronous, Memory Configuration:32M x 16, Memory Case Style:FBGA, No. of Pins:60, IC Interface Type:LVCMOS, Operating Temperature Min:-30C, Operating Temperature Max:85C, , RoHS Compliant: Yes |
| H5MS5162FFR-E3M | 制造商:SK Hynix Inc 功能描述: |
| H5N1503P | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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