參數(shù)資料
型號(hào)： H5MS5162DFR-K3M
廠商： HYNIX SEMICONDUCTOR INC
元件分類： DRAM
英文描述： 32M X 16 DDR DRAM, 0.5 ns, PBGA60
封裝： 8 X 10 MM, 1 MM HEIGHT, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, FBGA-60
文件頁(yè)數(shù)： 48/62頁(yè)
文件大?。?/td> 1314K
代理商： H5MS5162DFR-K3M
Rev 1.3 / Apr. 2009
52
11
Mobile DDR SDRAM 512Mbit (32M x 16bit)
H5MS5162DFR Series
Mode Register
The mode register contains the specific mode of operation of the Mobile DDR SDRAM. This register includes the selec-
tion of a burst length(2, 4 or 8), a cas latency(2 or 3), a burst type. The mode register set must be done before any
activate command after the power up sequence. Any contents of the mode register be altered by re-programming the
mode register through the execution of mode register set command.
Mode Register Set
BURST LENGTH
Read and write accesses to the Mobile DDR SDRAM are burst oriented, with the burst length being programmable, as
shown in Page10. The burst length determines the maximum number of column locations that can be accessed for a
given READ or WRITE command. Burst lengths of 2, 4 or 8 locations are available for both the sequential and the
interleaved burst types.
BURST TYPE
Accesses within a given burst may be programmed to be either sequential or interleaved.
CAS LATENCY
The CAS latency is the delay between the registration of a READ command and the availability of the first piece of out-
put data. If a READ command is registered at a clock edge
n and the latency is 3 clocks, the first data element will be
valid at
n + 2tCK + tAC. If a READ command is registered at a clock edge n and the latency is 2 clocks, the first data
element will be valid at
n + tCK + tAC.
CLK
Precharge
All Bank
Mode
Register
Set
CM D
tCK
Comm and
(any)
0
1
2
3
4
5
6
tRP
2 CLK
m in
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
H5MS5162DFR-L3M 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mb (32Mx16bit) Mobile DDR SDRAM
H5MS5162EFR 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:536,870,912-bit CMOS Low Power Double Data Rate Synchronous DRAM (Mobile DDR SDRAM)
H5MS5162EFR-J3M 制造商:SK Hynix Inc 功能描述:SDRAM MOBILE DDR 512MB (X16) 60FBGA 制造商:SK Hynix Inc 功能描述:SDRAM, MOBILE DDR, 512MB (X16), 60FBGA 制造商:SK Hynix Inc 功能描述:SDRAM, MOBILE DDR, 512MB (X16), 60FBGA, Memory Type:DRAM - Synchronous, Memory C 制造商:SK Hynix Inc 功能描述:SDRAM, MOBILE DDR, 512MB (X16), 60FBGA, Memory Type:DRAM - Synchronous, Memory Configuration:32M x 16, Memory Case Style:FBGA, No. of Pins:60, IC Interface Type:LVCMOS, Operating Temperature Min:-30C, Operating Temperature Max:85C, , RoHS Compliant: Yes
H5MS5162FFR-E3M 制造商:SK Hynix Inc 功能描述:
H5N1503P 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
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