參數(shù)資料
型號: H5MS5162DFR-K3M
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: 32M X 16 DDR DRAM, 0.5 ns, PBGA60
封裝: 8 X 10 MM, 1 MM HEIGHT, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, FBGA-60
文件頁數(shù): 62/62頁
文件大小: 1314K
代理商: H5MS5162DFR-K3M
Rev 1.3 / Apr. 2009
9
11
Mobile DDR SDRAM 512Mbit (32M x 16bit)
H5MS5162DFR Series
FUNCTIONAL BLOCK DIAGRAM
8Mbit x 4banks x 16 I/O Mobile DDR SDRAM
16
Internal Row
Counter
Column
Pre
Decoder
Column Add
Counter
Self refresh
logic & timer
Extended
Mode
Register
S
en
se
A
M
P
&
I/
O
G
a
te
O
u
tp
u
t
B
u
ffer
&
L
o
g
ic
Address
Register
Burst
Counter
Mode Register
S
ta
te
M
a
ch
in
e
A
d
res
s
B
u
ffer
s
Bank Select
Column Active
Row Active
CAS
Latency
CLK
CKE
CS
RAS
CAS
WE
U/LDM
A0
A1
BA1
BA0
A12
PASR
Row
Pre
Decoder
Refresh
DQ0
DQ15
R
o
w
d
ec
o
d
er
s
R
o
w
d
ec
o
d
er
s
R
o
w
d
ec
o
d
er
s
R
o
w
d
ec
o
d
er
s
Column decoders
8Mx16 Bank0
8Mx16 Bank1
8Mx16 Bank2
8Mx16 Bank3
Memory
Cell
Array
Data Out Control
B
u
rs
t
L
en
g
th
CLK
In
p
u
t
B
u
ffer
&
L
o
g
ic
DS
Write Data Register
2-bit Prefetch Unit
32
16
32
Data Strobe
Transmitter
Data Strobe
Receiver
DS
LDQS
,
UDQS
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