參數(shù)資料
型號(hào)： H5MS5162DFR-K3M
廠商： HYNIX SEMICONDUCTOR INC
元件分類(lèi)： DRAM
英文描述： 32M X 16 DDR DRAM, 0.5 ns, PBGA60
封裝： 8 X 10 MM, 1 MM HEIGHT, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, FBGA-60
文件頁(yè)數(shù)： 23/62頁(yè)
文件大?。?/td> 1314K
代理商： H5MS5162DFR-K3M
Rev 1.3 / Apr. 2009
3
11
Mobile DDR SDRAM 512Mbit (32M x 16bit)
H5MS5162DFR Series
FEATURES SUMMARY
●
● Mobile DDR SDRAM
- Double data rate architecture: two data transfer per
clock cycle
●
● Mobile DDR SDRAM INTERFACE
- x16 bus width
- Multiplexed Address (Row and Column address)
●
● SUPPLY VOLTAGE
- 1.8V device: VDD and VDDQ = 1.7V to 1.95V
●
● MEMORY CELL ARRAY
- 512Mbit (x16 device) = 8M x 4Bank x 16 I/O
●
● DATA STROBE
- x16 device: LDQS and UDQS
- Bidirectional, data strobe (DQS) is transmitted and re-
ceived with data, to be used in capturing data at the
receiver
- Data and data mask referenced to both edges of DQS
●
● LOW POWER FEATURES
- PASR (Partial Array Self Refresh)
- AUTO TCSR (Temperature Compensated Self Refresh)
- DS (Drive Strength)
- DPD (Deep Power Down): DPD is an optional feature,
so please contact Hynix office for the DPD feature
●
● INPUT CLOCK
- Differential clock inputs (CK, CK)
●
● Data MASK
- LDM and UDM: Input mask signals for write data
- DM masks write data-in at the both rising and
falling edges of the data strobe
●
● MODE RERISTER SET, EXTENDED MODE REGIS-
TER SET and STATUS REGISTER READ
- Keep to the JEDEC Standard regulation
(Low Power DDR SDRAM)
●
● CAS LATENCY
- Programmable CAS latency 2 or 3 supported
●
● BURST LENGTH
- Programmable burst length 2 / 4 / 8 with both sequen-
tial and interleave mode
●
● AUTO PRECHARGE
- Option for each burst access
●
● AUTO REFRESH AND SELF REFRESH MODE
●
● CLOCK STOP MODE
- Clock stop mode is a feature supported by Mobile DDR
SDRAM.
- Keep to the JEDEC Standard regulation
●
● INITIALIZING THE MOBILE DDR SDRAM
- Occurring at device power up or interruption of device
power
●
● PACKAGE
- 60 Ball, 0.8mm pitch FBGA, 8x10[mm2], t=1.0mm max,
Lead & Halogen Free
●
● Operating Temperature
- Mobile Temp.: -30
oC ~ 85oC
相關(guān)PDF資料
PDF描述
H6101NL DATACOM TRANSFORMER FOR GENERAL PURPOSE APPLICATION(S)
H6E1PC03130001 105 CONTACT(S), MULTIWAY RACK AND PANEL CONN, CRIMP, PLUG
H6E1PX03130001 105 CONTACT(S), MULTIWAY RACK AND PANEL CONN, PLUG
H6E2PC03130001 MULTIWAY RACK AND PANEL CONN, CRIMP, PLUG
H6E2PX03130001 MULTIWAY RACK AND PANEL CONN, PLUG
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
H5MS5162DFR-L3M 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mb (32Mx16bit) Mobile DDR SDRAM
H5MS5162EFR 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:536,870,912-bit CMOS Low Power Double Data Rate Synchronous DRAM (Mobile DDR SDRAM)
H5MS5162EFR-J3M 制造商:SK Hynix Inc 功能描述:SDRAM MOBILE DDR 512MB (X16) 60FBGA 制造商:SK Hynix Inc 功能描述:SDRAM, MOBILE DDR, 512MB (X16), 60FBGA 制造商:SK Hynix Inc 功能描述:SDRAM, MOBILE DDR, 512MB (X16), 60FBGA, Memory Type:DRAM - Synchronous, Memory C 制造商:SK Hynix Inc 功能描述:SDRAM, MOBILE DDR, 512MB (X16), 60FBGA, Memory Type:DRAM - Synchronous, Memory Configuration:32M x 16, Memory Case Style:FBGA, No. of Pins:60, IC Interface Type:LVCMOS, Operating Temperature Min:-30C, Operating Temperature Max:85C, , RoHS Compliant: Yes
H5MS5162FFR-E3M 制造商:SK Hynix Inc 功能描述:
H5N1503P 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
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