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參數(shù)資料
| 型號(hào)： | H5MS5162DFR-K3M |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 32M X 16 DDR DRAM, 0.5 ns, PBGA60 |
| 封裝： | 8 X 10 MM, 1 MM HEIGHT, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, FBGA-60 |
| 文件頁(yè)數(shù)： | 4/62頁(yè) |
| 文件大小： | 1314K |
| 代理商： | H5MS5162DFR-K3M |
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Rev 1.3 / Apr. 2009
12
11
Mobile DDR SDRAM 512Mbit (32M x 16bit)
H5MS5162DFR Series
REGISTER DEFINITION III
Status Register (SR) for Mobile DDR SDRAM
Note)
1. The revision number starts at ‘0000’ and increments by ‘0001’ each time a change in the manufacturer’s specification, IBIS, or
process occurs.
2. Low temperature out of range.
3. High temperature out of range - no refresh rate can guarantee functionality.
4. The refresh rate multiplier is based on the memory’s temperature sensor.
5. Required average periodic refresh interval = tREFI * multiplier.
6. Status Register is only for Read.
7. To read out Status Register values, BA[1:0] set to 01b and A[12:0] set to all 0 with MRS command followed by Read command
with that BA[1:0] are Don’t care and A[12:0] set to all 0.
BA1
BA0
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
0
1
0
DQ15 DQ14 DQ13 DQ12 DQ11 DQ10 DQ9
DQ8
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
Density
-
DW
Refresh Rate
Revision Identification
Manufacturers Identification
0
1
0
X
X1)
0
1
0
Density
DQ15 DQ14 DQ13 Density
0
128
0
1
256
0
1
0
512
0
1
1024
1
0
Reserved
1
0
1
Reserved
1
0
Reserved
1
Reserved
DW (Device Width)
DQ11 Device Width
0
16 bits
1
32 bits
Refresh Rate
DQ10 DQ9
DQ8 Refresh Rate
0
x
42)
0
1
0
4
0
1
2
1
0
1
0
1
0.5
1
0
0.25
1
0.253)
Manufacturers Identification
DQ3
DQ2
DQ1
DQ0
Manufacturer
0
1
0
Hynix
x
Reserved or
other companies
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| H5MS5162DFR-L3M | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:512Mb (32Mx16bit) Mobile DDR SDRAM |
| H5MS5162EFR | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:536,870,912-bit CMOS Low Power Double Data Rate Synchronous DRAM (Mobile DDR SDRAM) |
| H5MS5162EFR-J3M | 制造商:SK Hynix Inc 功能描述:SDRAM MOBILE DDR 512MB (X16) 60FBGA 制造商:SK Hynix Inc 功能描述:SDRAM, MOBILE DDR, 512MB (X16), 60FBGA 制造商:SK Hynix Inc 功能描述:SDRAM, MOBILE DDR, 512MB (X16), 60FBGA, Memory Type:DRAM - Synchronous, Memory C 制造商:SK Hynix Inc 功能描述:SDRAM, MOBILE DDR, 512MB (X16), 60FBGA, Memory Type:DRAM - Synchronous, Memory Configuration:32M x 16, Memory Case Style:FBGA, No. of Pins:60, IC Interface Type:LVCMOS, Operating Temperature Min:-30C, Operating Temperature Max:85C, , RoHS Compliant: Yes |
| H5MS5162FFR-E3M | 制造商:SK Hynix Inc 功能描述: |
| H5N1503P | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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