參數(shù)資料
型號(hào)： HB52RF329E2
廠商： Hitachi,Ltd.
英文描述： 256 MB Registered SDRAM DIMM(256 MB 寄存同步DRAM DIMM)
中文描述： 注冊(cè)使用256 MB SDRAM的內(nèi)存（256 MB的寄存同步的DRAM內(nèi)存）
文件頁(yè)數(shù)： 41/64頁(yè)
文件大小： 869K
代理商： HB52RF329E2
HB52RF329E2-75F
41
Write command to Read command interval:
1. Same bank, same ROW address:
When the read command is executed at the same ROW address of the
same bank as the preceding write command, the read command can be performed after an interval of no less
than 1 clock. However, in the case of a burst write, data will continue to be written until one cycle before the
read command is executed.
WRITE to READ Command Interval (1)
CK
Command
Din
WRIT
READ
in A0
out B1
out B2
out B3
out B0
Dout
Column = A
Write
Column = B
Read
Column = B
Dout
CE
Latency
DQMB
Burst Write Mode
CE
Latency = 4
Burst Length = 4
Bank 0
WRITE to READ Command Interval (2)
CK
Command
Din
WRIT
READ
in A0
out B1
out B2
out B3
out B0
Dout
Column = A
Write
Column = B
Read
Column = B
Dout
CE
Latency
in A1
DQMB
Burst Write Mode
CE
Latency = 4
Burst Length = 4
Bank 0
2. Same bank, different ROW address:
When the ROW address changes, consecutive read commands
cannot be executed; it is necessary to separate the two commands with a precharge command and a bank-
active command.
3. Different bank:
When the bank changes, the read command can be performed after an interval of no less
than 1 clock, provided that the other bank is in the bank-active state. However, in the case of a burst write,
data will continue to be written until one clock before the read command is executed (as in the case of the
same bank and the same address).
相關(guān)PDF資料
PDF描述
HB52RF648DC-B 512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 】 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 】 8 components) PC133/100 SDRAM
HB52RD648DC-B 512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 】 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 】 8 components) PC133/100 SDRAM
HB52RF649DC 512MB Unbuffered SDRAM S.O.DIMM
HB52RD649DC-A6B 512MB Unbuffered SDRAM S.O.DIMM
HB52RD649DC-A6BL 512MB Unbuffered SDRAM S.O.DIMM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HB52RF329E2-75F 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x72 SDRAM Module
HB52RF648DC-75B 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x64 SDRAM Module
HB52RF648DC-75BL 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x64 SDRAM Module
HB52RF648DC-B 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 】 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 】 8 components) PC133/100 SDRAM
HB52RF649DC 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:512MB Unbuffered SDRAM S.O.DIMM
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