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參數(shù)資料
| 型號(hào)： | HB52RF329E2 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 256 MB Registered SDRAM DIMM(256 MB 寄存同步DRAM DIMM) |
| 中文描述： | 注冊使用256 MB SDRAM的內(nèi)存（256 MB的寄存同步的DRAM內(nèi)存） |
| 文件頁數(shù)： | 20/64頁 |
| 文件大小： | 869K |
| 代理商： | HB52RF329E2 |
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HB52RF329E2-75F
20
Command Operation
Command Truth Table
The SDRAM module recognizes the following commands specified by the
S
,
RE
,
CE
,
W
and address pins.
CKE
Command
Symbol
n - 1 n
S
RE
CE
W
A12/A13 A10
A0
to A11
Ignore command
DESL
H
×
×
×
×
×
×
×
×
×
×
H
×
×
×
×
×
×
×
×
×
×
×
×
No operation
NOP
H
L
H
H
H
Burst stop in full page
BST
H
L
H
H
L
Column address and read command
READ
H
L
H
L
H
V
L
V
Read with auto-precharge
READ A
H
L
H
L
H
V
H
V
Column address and write command
WRIT
H
L
H
L
L
V
L
V
Write with auto-precharge
WRIT A
H
L
H
L
L
V
H
V
Row address strobe and bank active
ACTV
H
L
L
H
H
V
V
V
Precharge select bank
PRE
H
L
L
H
L
V
L
×
×
×
Precharge all bank
PALL
H
L
L
H
L
×
×
H
Refresh
REF/SELF H
V
L
L
L
H
×
Mode register set
Note:
H: V
IH
. L: V
IL
.
×
: V
IH
or V
IL
. V: Valid address input
MRS
H
×
L
L
L
L
V
V
V
Ignore command [DESL]:
When this command is set (
S
is High), the SDRAM module ignore command
input at the clock. However, the internal status is held.
No operation [NOP]:
This command is not an execution command. However, the internal operations
continue.
Burst stop in full-page [BST]:
This command stops a full-page burst operation (burst length = full-page)
and is illegal otherwise. When data input/output is completed for a full page of data, it automatically returns
to the start address, and input/output is performed repeatedly.
Column address strobe and read command [READ]:
This command starts a read operation. In addition,
the start address of burst read is determined by the column address and the bank select address (BA). After
the read operation, the output buffer becomes High-Z.
Read with auto-precharge [READ A]:
This command automatically performs a precharge operation after a
burst read with a burst length of 1, 2, 4 or 8. When the burst length is full-page, this command is illegal.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HB52RF648DC-B | 512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 】 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 】 8 components) PC133/100 SDRAM |
| HB52RD648DC-B | 512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 】 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 】 8 components) PC133/100 SDRAM |
| HB52RF649DC | 512MB Unbuffered SDRAM S.O.DIMM |
| HB52RD649DC-A6B | 512MB Unbuffered SDRAM S.O.DIMM |
| HB52RD649DC-A6BL | 512MB Unbuffered SDRAM S.O.DIMM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HB52RF329E2-75F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
| HB52RF648DC-75B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HB52RF648DC-75BL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HB52RF648DC-B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 】 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 】 8 components) PC133/100 SDRAM |
| HB52RF649DC | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Unbuffered SDRAM S.O.DIMM |
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