參數(shù)資料
型號(hào)： HB52RF329E2
廠商： Hitachi,Ltd.
英文描述： 256 MB Registered SDRAM DIMM(256 MB 寄存同步DRAM DIMM)
中文描述： 注冊(cè)使用256 MB SDRAM的內(nèi)存（256 MB的寄存同步的DRAM內(nèi)存）
文件頁(yè)數(shù)： 27/64頁(yè)
文件大小： 869K
代理商： HB52RF329E2
HB52RF329E2-75F
27
From PRECHARGE state, command operation
To [DESL], [NOP] or [BST]:
When these commands are executed, the SDRAM module enters the IDLE
state after t
RP
has elapsed from the completion of precharge.
From IDLE state, command operation
To [DESL], [NOP], [BST], [PRE] or [PALL]:
These commands result in no operation.
To [ACTV]:
The bank specified by the address pins and the ROW address is activated.
To [REF], [SELF]:
The SDRAM module enters refresh mode (auto-refresh or self-refresh).
To [MRS]:
The SDRAM module enters the mode register set cycle.
From ROW ACTIVE state, command operation
To [DESL], [NOP] or [BST]:
These commands result in no operation.
To [READ], [READ A]:
A read operation starts. (However, an interval of t
RCD
is required.)
To [WRIT], [WRIT A]:
A write operation starts. (However, an interval of t
RCD
is required.)
To [ACTV]:
This command makes the other bank active. (However, an interval of t
RRD
is required.)
Attempting to make the currently active bank active results in an illegal command.
To [PRE], [PALL]:
These commands set the SDRAM module to precharge mode. (However, an interval of
t
RAS
is required.)
From READ state, command operation
To [DESL], [NOP]:
These commands continue read operations until the burst operation is completed.
To [BST]:
This command stops a full-page burst.
To [READ], [READ A]:
Data output by the previous read command continues to be output. After
CE
latency, the data output resulting from the next command will start.
To [WRIT], [WRIT A]:
These commands stop a burst read, and start a write cycle.
To [ACTV]:
This command makes other banks bank active. (However, an interval of t
RRD
is required.)
Attempting to make the currently active bank active results in an illegal command.
相關(guān)PDF資料
PDF描述
HB52RF648DC-B 512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 】 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 】 8 components) PC133/100 SDRAM
HB52RD648DC-B 512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 】 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 】 8 components) PC133/100 SDRAM
HB52RF649DC 512MB Unbuffered SDRAM S.O.DIMM
HB52RD649DC-A6B 512MB Unbuffered SDRAM S.O.DIMM
HB52RD649DC-A6BL 512MB Unbuffered SDRAM S.O.DIMM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HB52RF329E2-75F 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module
HB52RF648DC-75B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module
HB52RF648DC-75BL 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module
HB52RF648DC-B 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 】 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 】 8 components) PC133/100 SDRAM
HB52RF649DC 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Unbuffered SDRAM S.O.DIMM
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