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參數(shù)資料
| 型號： | HB52RF329E2 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 256 MB Registered SDRAM DIMM(256 MB 寄存同步DRAM DIMM) |
| 中文描述： | 注冊使用256 MB SDRAM的內(nèi)存（256 MB的寄存同步的DRAM內(nèi)存） |
| 文件頁數(shù)： | 21/64頁 |
| 文件大小： | 869K |
| 代理商： | HB52RF329E2 |
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HB52RF329E2-75F
21
Column address strobe and write command [WRIT]:
This command starts a write operation. When the
burst write mode is selected, the column address and the bank select address (BA) become the burst write start
address. When the single write mode is selected, data is only written to the location specified by the column
address and the bank select address (BA).
Write with auto-precharge [WRIT A]:
This command automatically performs a precharge operation after a
burst write with a length of 1, 2, 4 or 8, or after a single write operation. When the burst length is full-page,
this command is illegal.
Row address strobe and bank activate [ACTV]:
This command activates the bank that is selected by Bank
select address (BA) and determines the row address (AX0 to AX11). When A12 and A13 are Low, bank 0 is
activated. When A12 is High and A13 is Low, bank 1 is activated. When A12 is Low and A13 is High, bank
2 is activated. When A12 and A13 are High, bank 3 is activated.
Precharge selected bank [PRE]:
This command starts precharge operation for the bank selected by Bank
select address (BA). If A12 and A13 are Low, bank 0 is selected. If A12 is High and A13 is Low, bank 1 is
selected. If A12 is Low and A13 is High, bank 2 is selected. If A12 and A13 are High, bank 3 is selected.
Precharge all banks [PALL]:
This command starts a precharge operation for all banks.
Refresh [REF/SELF]:
This command starts the refresh operation. There are two types of refresh operation,
the one is auto-refresh, and the other is self-refresh. For details, refer to the CKE truth table section.
Mode register set [MRS]:
The SDRAM module has a mode register that defines how it operates. The mode
register is specified by the address pins (A0 to A13) at the mode register set cycle. For details, refer to the
mode register configuration. After power on, the contents of the mode register are undefined, execute the
mode register set command to set up the mode register.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HB52RF648DC-B | 512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 】 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 】 8 components) PC133/100 SDRAM |
| HB52RD648DC-B | 512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 】 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 】 8 components) PC133/100 SDRAM |
| HB52RF649DC | 512MB Unbuffered SDRAM S.O.DIMM |
| HB52RD649DC-A6B | 512MB Unbuffered SDRAM S.O.DIMM |
| HB52RD649DC-A6BL | 512MB Unbuffered SDRAM S.O.DIMM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HB52RF329E2-75F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
| HB52RF648DC-75B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HB52RF648DC-75BL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HB52RF648DC-B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 】 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 】 8 components) PC133/100 SDRAM |
| HB52RF649DC | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Unbuffered SDRAM S.O.DIMM |
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