- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370430 > HB52RD648DC-B (Elpida Memory, Inc.) 512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 】 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 】 8 components) PC133/100 SDRAM PDF資料下載
參數(shù)資料
| 型號(hào)： | HB52RD648DC-B |
| 廠商： | Elpida Memory, Inc. |
| 英文描述： | 512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 】 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 】 8 components) PC133/100 SDRAM |
| 中文描述： | 512 MB的無(wú)緩沖內(nèi)存的SODIMM 64 Mword】64位，133/100 MHz內(nèi)存總線，2銀模塊（16個(gè)32米】8部分）PC133/100 SDRAM內(nèi)存 |
| 文件頁(yè)數(shù)： | 1/20頁(yè) |
| 文件大?。?/td> | 160K |
| 代理商： | HB52RD648DC-B |
當(dāng)前第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
HB52RF648DC-B, HB52RD648DC-B
512 MB Unbuffered SDRAM S.O.DIMM
64-Mword
×
64-bit, 133/100 MHz Memory Bus, 2-Bank Module
(16 pcs of 32 M
×
8 components)
PC133/100 SDRAM
E0083H40 (Ver. 4.0)
Nov. 16, 2001 (K) Japan
Description
The HB52RF648DC, HB52RD648DC are a 32M
×
64
×
2 banks Synchronous Dynamic RAM Small Outline
Dual In-line Memory Module (S.O.DIMM), mounted 16 pieces of 256-Mbit SDRAM (HM5225805BTB)
sealed in TCP package and 1 piece of serial EEPROM (2-kbit) for Presence Detect (PD). An outline of the
products is 144-pin Zig Zag Dual tabs socket type compact and thin package. Therefore, they make high
density mounting possible without surface mount technology. They provide common data inputs and outputs.
Decoupling capacitors are mounted beside TCP on the module board.
Note:
Do not push the cover or drop the modules in order to protect from mechanical defects, which would
be electrical defects.
Features
Fully compatible with: JEDEC standard outline 8-byte S.O.DIMM
144-pin Zig Zag Dual tabs socket type (dual lead out)
Outline: 67.60 mm (Length)
×
31.75 mm (Height)
×
3.80 mm (Thickness)
Lead pitch: 0.80 mm
3.3 V power supply
Clock frequency: 133/100 MHz (max)
LVTTL interface
Data bus width:
×
64 Non parity
Single pulsed
RAS
4 Banks can operates simultaneously and independently
Burst read/write operation and burst read/single write operation capability
Programmable burst length : 1/2/4/8
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HB52RF649DC | 512MB Unbuffered SDRAM S.O.DIMM |
| HB52RD649DC-A6B | 512MB Unbuffered SDRAM S.O.DIMM |
| HB52RD649DC-A6BL | 512MB Unbuffered SDRAM S.O.DIMM |
| HB52RD649DC-B | 512MB Unbuffered SDRAM S.O.DIMM |
| HB52RF649DC-75B | 512MB Unbuffered SDRAM S.O.DIMM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HB52RD648DC-B6B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HB52RD648DC-B6BL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HB52RD649DC-A6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Unbuffered SDRAM S.O.DIMM |
| HB52RD649DC-A6BL | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Unbuffered SDRAM S.O.DIMM |
| HB52RD649DC-B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Unbuffered SDRAM S.O.DIMM |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。