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參數(shù)資料
| 型號： | HB52RF329E2 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 256 MB Registered SDRAM DIMM(256 MB 寄存同步DRAM DIMM) |
| 中文描述： | 注冊使用256 MB SDRAM的內存（256 MB的寄存同步的DRAM內存） |
| 文件頁數(shù)： | 30/64頁 |
| 文件大小： | 869K |
| 代理商： | HB52RF329E2 |
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HB52RF329E2-75F
30
Mode Register Configuration
The mode register is set by the input to the address pins (A0 to A13) during mode register set cycles. The
mode register consists of five sections, each of which is assigned to address pins.
A13, A12, A11, A10, A9 A8: (OPCODE):
The SDRAM module has two types of write modes. One is the
burst write mode, and the other is the single write mode. These bits specify write mode.
Burst read and burst write:
Burst write is performed for the specified burst length starting from the column
address specified in the write cycle.
Burst read and single write:
Data is only written to the column address specified during the write cycle,
regardless of the burst length.
A7:
Keep this bit Low at the mode register set cycle. If this pin is high, the vender test mode is set.
A6, A5, A4: (LMODE):
These pins specify the
CE
latency.
A3: (BT):
A burst type is specified. When full-page burst is performed, only "sequential" can be selected.
A2, A1, A0: (BL):
These pins specify the burst length.
A2 A1
A0
Burst Length
BT=0
0
0
0
0
1
1
0
0
1
1
0
0
0
1
0
1
0
1
1
2
4
8
R
R
1
1
1
F.P.
BT=1
1
1
0
R
1
2
4
8
R
R
R
R
A3
0 Sequential
1
Interleave
Burst Type
A6
0
0
0
0
1
A5
0
0
1
1
X
A4 CAS Latency
0
1
0
1
X
R
R
3
4
R
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
OPCODE
0
LMODE
BT
BL
A9
0
0
1
1
R
Write mode
Burst read and burst write
A8
0
1
0
1
Burst read and single write
R
F.P. = Full Page
R is Reserved (inhibit)
X: 0 or 1
A11
A10
A10
X
X
X
A11
0
X
X
X
0
A12
A13
A13
0
X
X
X
A12
0
X
X
X
相關PDF資料 |
PDF描述 |
|---|---|
| HB52RF648DC-B | 512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 】 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 】 8 components) PC133/100 SDRAM |
| HB52RD648DC-B | 512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 】 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 】 8 components) PC133/100 SDRAM |
| HB52RF649DC | 512MB Unbuffered SDRAM S.O.DIMM |
| HB52RD649DC-A6B | 512MB Unbuffered SDRAM S.O.DIMM |
| HB52RD649DC-A6BL | 512MB Unbuffered SDRAM S.O.DIMM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HB52RF329E2-75F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
| HB52RF648DC-75B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HB52RF648DC-75BL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HB52RF648DC-B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 】 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 】 8 components) PC133/100 SDRAM |
| HB52RF649DC | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Unbuffered SDRAM S.O.DIMM |
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