參數(shù)資料
型號(hào)： HB52RF329E2
廠商： Hitachi,Ltd.
英文描述： 256 MB Registered SDRAM DIMM(256 MB 寄存同步DRAM DIMM)
中文描述： 注冊(cè)使用256 MB SDRAM的內(nèi)存（256 MB的寄存同步的DRAM內(nèi)存）
文件頁數(shù)： 19/64頁
文件大?。?/td> 869K
代理商： HB52RF329E2
HB52RF329E2-75F
19
Pin Functions
CK0 to CK3 (input pin):
CK is the master clock input to this pin. The other input signals are referred at CK
rising edge.
S0
to
S3
(input pin):
When
S
is Low, the command input cycle becomes valid. When
S
is High, all inputs
are ignored. However, internal operations (bank active, burst operations, etc.) are held.
RE
,
CE
and
W
(input pins):
Although these pin names are the same as those of conventional DRAMs, they
function in a different way. These pins define operation commands (read, write, etc.) depending on the
combination of their voltage levels. For details, refer to the command operation section.
A0 to A11 (input pins):
Row address (AX0 to AX11) is determined by A0 to A11 level at the bank active
command cycle CK rising edge. Column address (AY0 to AY9) is determined by A0 to level at the read or
write command cycle CK rising edge. And this column address becomes burst access start address. A10
defines the precharge mode. When A10 = High at the precharge command cycle, all banks are precharged.
But when A10 = Low at the precharge command cycle, only the bank that is selected by A12/A13 (BA) is
precharged.
A12/A13 (input pin):
A12/A13 are bank select signal (BA). The memory array is divided into bank 0, bank
1, bank 2 and bank 3. If A12 is Low and A13 is Low, bank 0 is selected. If A12 is High and A13 is Low,
bank 1 is selected. If A12 is Low and A13 is High, bank 2 is selected. If A12 is High and A13 is High, bank
3 is selected.
CKE0 (input pin):
This pin determines whether or not the next CK is valid. If CKE is High, the next CK
rising edge is valid. If CKE is Low, the next CK rising edge is invalid. This pin is used for power-down and
clock suspend modes.
DQMB0 to DQMB7 (input pins):
Read operation: If DQMB is High, the output buffer becomes High-Z. If
the DQMB is Low, the output buffer becomes Low-Z.
Write operation: If DQMB is High, the previous data is held (the new data is not written). If DQMB is Low,
the data is written.
DQ0 to DQ63, CB0 to CB7 (input/output pins):
Data is input to and output from these pins.
V
CC
(power supply pins):
3.3 V is applied.
V
SS
(power supply pins):
Ground is connected.
相關(guān)PDF資料
PDF描述
HB52RF648DC-B 512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 】 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 】 8 components) PC133/100 SDRAM
HB52RD648DC-B 512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 】 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 】 8 components) PC133/100 SDRAM
HB52RF649DC 512MB Unbuffered SDRAM S.O.DIMM
HB52RD649DC-A6B 512MB Unbuffered SDRAM S.O.DIMM
HB52RD649DC-A6BL 512MB Unbuffered SDRAM S.O.DIMM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HB52RF329E2-75F 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module
HB52RF648DC-75B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module
HB52RF648DC-75BL 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module
HB52RF648DC-B 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 】 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 】 8 components) PC133/100 SDRAM
HB52RF649DC 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Unbuffered SDRAM S.O.DIMM
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