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參數(shù)資料
| 型號(hào)： | HB52RF329E2 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 256 MB Registered SDRAM DIMM(256 MB 寄存同步DRAM DIMM) |
| 中文描述： | 注冊使用256 MB SDRAM的內(nèi)存（256 MB的寄存同步的DRAM內(nèi)存） |
| 文件頁數(shù)： | 32/64頁 |
| 文件大?。?/td> | 869K |
| 代理商： | HB52RF329E2 |
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HB52RF329E2-75F
32
Operation of the Registered SDRAM module
Read/Write Operations
Bank active:
Before executing a read or write operation, the corresponding bank and the row address must be
activated by the bank active (ACTV) command. Bank 0, bank 1, bank 2 or bank 3 is activated according to
the status of the Bank select address (BA) pin, and the row address (AX0 to AX11) is activated by the A0 to
A11 pins at the bank active command cycle. An interval of t
RCD
is required between the bank active command
input and the following read/write command input.
Read operation:
A read operation starts when a read command is input. Output buffer becomes Low-Z in
the (
CE
Latency - 1) cycle after read command set. The SDRAM module can perform a burst read operation.
The burst length can be set to 1, 2, 4, 8 or full-page. The start address for a burst read is specified by the
column address and the bank select address (BA) at the read command set cycle. In a read operation, data
output starts after the number of clocks specified by the
CE
Latency. The
CE
Latency can be set to 3 or 4.
When the burst length is 1, 2, 4 or 8, the Dout buffer automatically becomes High-Z at the next clock after the
successive burst-length data has been output.
The
CE
latency and burst length must be specified at the mode register.
CE
Latency
READ
CK
Command
Dout
ACTV
Row
Column
Address
CL = 4
out 0
out 1
out 2
out 3
t
RCD
CL =
CE
latency
Burst Length = 4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HB52RF648DC-B | 512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 】 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 】 8 components) PC133/100 SDRAM |
| HB52RD648DC-B | 512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 】 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 】 8 components) PC133/100 SDRAM |
| HB52RF649DC | 512MB Unbuffered SDRAM S.O.DIMM |
| HB52RD649DC-A6B | 512MB Unbuffered SDRAM S.O.DIMM |
| HB52RD649DC-A6BL | 512MB Unbuffered SDRAM S.O.DIMM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HB52RF329E2-75F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
| HB52RF648DC-75B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HB52RF648DC-75BL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HB52RF648DC-B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 】 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 】 8 components) PC133/100 SDRAM |
| HB52RF649DC | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Unbuffered SDRAM S.O.DIMM |
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