參數(shù)資料
型號: HB52RD649DC-A6BL
廠商: ELPIDA MEMORY INC
元件分類: DRAM
英文描述: 512MB Unbuffered SDRAM S.O.DIMM
中文描述: 64M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144
封裝: ZIG ZAG DUAL TAB SOCKET TYPE, SODIMM-144
文件頁數(shù): 1/16頁
文件大?。?/td> 464K
代理商: HB52RD649DC-A6BL
Document No. E0223H30 (Ver. 3.0)
Date Published April 2002 (K) Japan
URL: http://www.elpida.com
Elpida Memory, Inc. 2001-2002
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
DATA SHEET
512MB Unbuffered SDRAM S.O.DIMM
HB52RF649DC-B (64M words
×
72 bits, 2 bank)
HB52RD649DC-B (64M words
×
72 bits, 2 bank)
Description
The HB52RF649DC, HB52RD649DC are a 64M
×
72
×
2 banks Synchronous Dynamic RAM Small Outline
Dual In-line Memory Module (S.O.DIMM), mounted 18
pieces of 256M bits SDRAM sealed in TCP package
and 1 piece of serial EEPROM (2k bits) for Presence
Detect (PD). An outline of the products is 144-pin Zig
Zag Dual tabs socket type compact and thin package.
Therefore, they make high density mounting possible
without surface mount technology. They provide
common data inputs and outputs. Decoupling
capacitors are mounted beside TCP on the module
board.
Note: Do not push the cover or drop the modules in
order to protect from mechanical defects, which
would be electrical defects.
Features
Fully compatible with: JEDEC standard outline 8
bytes S.O.DIMM
144-pin Zig Zag Dual tabs socket type (dual lead out)
PCB height: 33.02mm (1.30inch)
Lead pitch: 0.80mm
3.3V power supply
Clock frequency: 133MHz/100MHz (max.)
LVTTL interface
Data bus width:
×
72 ECC
Single pulsed /RAS
4 Banks can operates simultaneously and
independently
Burst read/write operation and burst read/single write
operation capability
Programmable burst length (BL): 1, 2, 4, 8
2 variations of burst sequence
Sequential
Interleave
Programmable /CE latency (CL): 2, 3
Byte control by DQMB
Refresh cycles: 8192 refresh cycles/64ms
2 variations of refresh
Auto refresh
Self refresh
Low self refresh current
: HB52RF649DC-xxBL (L-version)
: HB52RD649DC-xxBL (L-version)
相關(guān)PDF資料
PDF描述
HB52RD649DC-B 512MB Unbuffered SDRAM S.O.DIMM
HB52RF649DC-75B 512MB Unbuffered SDRAM S.O.DIMM
HB52RF649DC-75BL 512MB Unbuffered SDRAM S.O.DIMM
HB52RF649DC-B 512MB Unbuffered SDRAM S.O.DIMM
HB54A2568KN 256MB DDR SDRAM S.O.DIMM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HB52RD649DC-B 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Unbuffered SDRAM S.O.DIMM
HB52RF1289E2 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1 GB Registered SDRAM DIMM 128-Mword 】 72-bit, 133 MHz Memory Bus, 2-Bank Module (36 pcs of 64 M 】 4 Components) PC133 SDRAM
HB52RF1289E2-75B 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:x72 SDRAM Module
HB52RF1289E2U-75B 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1 GB Registered SDRAM DIMM 128-Mword × 72-bit, 133 MHz Memory Bus, 2-Bank Module (36 pcs of 64 M × 4 Components) PC133 SDRAM
HB52RF328GB-75B 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB Unbuffered SDRAM Micro DIMM