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參數(shù)資料
| 型號(hào)： | AM54BDS128AGT89IT |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | 存儲(chǔ)器 |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, PBGA93 |
| 封裝： | 10 X 10 MM, 0.80 PITCH, FBGA-93 |
| 文件頁數(shù)： | 65/71頁 |
| 文件大?。?/td> | 1031K |
| 代理商： | AM54BDS128AGT89IT |
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July 23, 2002
Am54BDS128AG
68
ADV ANCE
I N FO RMAT I O N
FLASH ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°C, 2.0 V V
CC, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90
°C, V
CC = 1.8 V,
1,000,000 cycles.
3. The typical chip programming time is considerably less than
the maximum chip programming time listed, since most
bytes program faster than the maximum program times
listed.
4. In the pre-programming step of the Embedded Erase
algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the
two- or four-bus-cycle sequence for the program command.
See Table 13 for further information on command
definitions.
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
FLASH LATCHUP CHARACTERISTICS
Note: Includes all pins except V
CC. Test conditions: VCC = 3.0 V, one pin at a time.
PACKAGE PIN CAPACITANCE
Note:
7. Test conditions T
A = 25°C, f = 1.0 MHz.
FLASH DATA RETENTION
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time (32 Kword or 8 Kword)
4
5
sec
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
54
sec
Word Program Time
11.5
210
s
Excludes system level
overhead (Note 5)
Accelerated Word Program Time
4
120
s
Chip Program Time (Note 3)
48
144
sec
Accelerated Chip Program Time
16
48
sec
Description
Min
Max
Input voltage with respect to V
SS on all pins except I/O pins
(including OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to V
SS on all I/O pins
–1.0 V
V
CC + 1.0 V
V
CC Current
–100 mA
+100 mA
Parameter
Symbol
Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN = 0
11
14
pF
C
OUT
Output Capacitance
V
OUT = 0
12
16
pF
C
IN2
Control Pin Capacitance
V
IN = 0
14
16
pF
C
IN3
WP#/ACC Pin Capacitance
V
IN = 0
17
20
pF
Parameter Description
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150
°C10
Years
125
°C20
Years
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