參數資料
型號: AM54BDS128AGT89IT
廠商: ADVANCED MICRO DEVICES INC
元件分類: 存儲器
英文描述: SPECIALTY MEMORY CIRCUIT, PBGA93
封裝: 10 X 10 MM, 0.80 PITCH, FBGA-93
文件頁數: 64/71頁
文件大小: 1031K
代理商: AM54BDS128AGT89IT
67
Am54BDS128AG
July 23, 2002
ADV ANCE
I N FO RMAT I O N
SRAM AC CHARACTERISTICS
Notes:
1. UB#s and LB#s controlled.
2. t
CW is measured from CE1#s going low to the end of write.
3. t
WR is measured from the end of write to the address change. tWR applied in case a write ends as CE1#s or WE# going high.
4. t
AS is measured from the address valid to the beginning of write.
5. A write occurs during the overlap (t
WP) of low CE#1 and low WE#. A write begins when CE1#s goes low and WE# goes low when
asserting UB#s or LB#s for a single byte operation or simultaneously asserting UB#s and LB#s for a double byte operation. A
write ends at the earliest transition when CE1#s goes high and WE# goes high. The t
WP is measured from the beginning of write
to the end of write.
Figure 38.
SRAM Write Cycle—UB#s and LB#s Control
Address
Data Valid
UB#s, LB#s
WE#
Data In
Data Out
High-Z
tWC
CE1#s
CE2s
tAW
tBW
tDW
tDH
tWR (See Note 3)
tAS
(See Note 4)
tCW
(See Note 2)
tCW (See Note 2)
tWP
(See Note 5)
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